"MIR fotovoltaick\u00E9 detektory na b\u00E1zi p InAs/AlSb/InAsSb/AlSb/p-GaSb heterostruktury typu II s hlubok\u00FDmi kvantov\u00FDmi j\u00E1mami na rozhran\u00ED (9. Mez. konf. o optoelektronice ve st\u0159edn\u00ED infra\u010Derven\u00E9 oblasti: materi\u00E1ly a sou\u010D\u00E1stky - MIOMD-IX, 7.-11.9.08)"@cs . . "MIR; photodetectors; negative electroluminescence; LP-MOV"@en . . . . "Yakovlev, Yu. P." . . "Hospodkov\u00E1, Alice" . "MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany)"@en . . "MIR fotovoltaick\u00E9 detektory na b\u00E1zi p InAs/AlSb/InAsSb/AlSb/p-GaSb heterostruktury typu II s hlubok\u00FDmi kvantov\u00FDmi j\u00E1mami na rozhran\u00ED (9. Mez. konf. o optoelektronice ve st\u0159edn\u00ED infra\u010Derven\u00E9 oblasti: materi\u00E1ly a sou\u010D\u00E1stky - MIOMD-IX, 7.-11.9.08)"@cs . "11"^^ . . . . "MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany)" . "RIV/68378271:_____/08:00317930!RIV09-AV0-68378271" . "5"^^ . "[32AEED546EED]" . "Hulicius, Eduard" . . "Grebentschikova, E. A." . . "Z(AV0Z10100521)" . "Pangr\u00E1c, Ji\u0159\u00ED" . . . "We studied electroluminescent characteristics and photoelectrical properties of asymmetric type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure. Intensive positive and negative electroluminescence was observed at T=300-400 K." . . "MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany)"@en . "Melichar, Karel" . "Studovali jsme elektroluminiscen\u010Dn\u00ED charakteristiky a fotoelektrick\u00E9 vlastnosti asymetrick\u00E9 p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostruktury typu II. Pozorovali jsme intenzivn\u00ED pozitivn\u00ED a negativn\u00ED elektorluminiscenci p\u0159i teplot\u00E1ch 300-400 K."@cs . "RIV/68378271:_____/08:00317930" . "Mikhailova, M. P." . "We studied electroluminescent characteristics and photoelectrical properties of asymmetric type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure. Intensive positive and negative electroluminescence was observed at T=300-400 K."@en . "MIR PhotoVoltaic detectors based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructure with deep quantum wells at the interface (9th Int. Conference on Mid-Infrared Optoelectronics: Materials and Devices - MIOMD-IX, 7.- 11.9.2008, Freiburg, Germany)" . . . "Ivanov, E. V." . "\u0160ime\u010Dek, Tomislav" . . . . "Andreev, I. A." . "Moiseev, K. D." . "379574" . .