"Single- and double-layer InAs/GaAs quantum dot structures with strain-reducing layers (SRLs) were prepared by metalorganic vaporphase epitaxy using the Stranski\u2013Krastanow growth mode. Structures were studied in-situ by reflectance anisotropy spectroscopy (RAS), and ex-situ by photoluminescence (PL). These structures, with very intense room temperature PL at wavelengths from 1.25 to 1.55 \u03BCm according to growth and structure parameters, were grown along while monitored with RAS. Strong correlation between RAS signal and PL intensity was found. Dependence of PL emission maximum position on SRL composition and capping layer thickness is shown."@en . "8"^^ . . "7-9" . "Kuldov\u00E1, Karla" . "[7E9AD80BCE6C]" . "\u0160ime\u010Dek, Tomislav" . . . "Melichar, Karel" . "Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures"@en . "nanostructures; metalorganic vapor-phase epitaxy; semiconducting III\u2013V materials"@en . . . "2229;2233" . . . "NL - Nizozemsko" . "Hulicius, Eduard" . . "310" . . . . "Oswald, Ji\u0159\u00ED" . "5"^^ . . "0022-0248" . "Struktury s jednou a dv\u011Bma vrstvami InAs/GaAs kvantov\u00FDch te\u010Dek a vrstvami redukuj\u00EDc\u00EDmi pnut\u00ED byly p\u0159ipraveny pomoc\u00ED MOVPE. R\u016Fst t\u011Bchto struktur, vykazuj\u00EDc\u00EDch velmi intenzivn\u00ED fotoluminiscenci za pokojov\u00E9 teploty emitovan\u00E9 na vlnov\u00FDch d\u00E9lk\u00E1ch od 1.25 do 1.55 \u03BCm byl monitorov\u00E1n pomoc\u00ED RAS."@cs . . "Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures" . . . . . "R\u016Fst a vlastnosti InAs/InxGa1-xAs/GaAs struktur s kvantov\u00FDmi te\u010Dkami"@cs . "Pangr\u00E1c, Ji\u0159\u00ED" . . "P(GA202/05/0242), P(GA202/06/0718), P(IAA100100719), P(KJB101630601), Z(AV0Z10100521)" . . . "Hospodkov\u00E1, Alice" . "Vysko\u010Dil, Jan" . "Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures"@en . . . "Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures" . "8"^^ . "Single- and double-layer InAs/GaAs quantum dot structures with strain-reducing layers (SRLs) were prepared by metalorganic vaporphase epitaxy using the Stranski\u2013Krastanow growth mode. Structures were studied in-situ by reflectance anisotropy spectroscopy (RAS), and ex-situ by photoluminescence (PL). These structures, with very intense room temperature PL at wavelengths from 1.25 to 1.55 \u03BCm according to growth and structure parameters, were grown along while monitored with RAS. Strong correlation between RAS signal and PL intensity was found. Dependence of PL emission maximum position on SRL composition and capping layer thickness is shown." . "R\u016Fst a vlastnosti InAs/InxGa1-xAs/GaAs struktur s kvantov\u00FDmi te\u010Dkami"@cs . . . . "Journal of Crystal Growth" . "RIV/68378271:_____/08:00308047" . "369673" . . . "RIV/68378271:_____/08:00308047!RIV08-AV0-68378271" .