. "CH - \u0160v\u00FDcarsk\u00E1 konfederace" . "Tvrdost nanokompozitn\u00EDch vrstev a-C:Si deponovan\u00FDch magnetronov\u00FDm napra\u0161ov\u00E1n\u00EDm"@cs . . "7"^^ . "423818" . . . . . "Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering"@en . . "167;173" . . . "Boh\u00E1\u010D, Petr" . "Hydrogen-free a-C:Si films with Si concentration from 3 to 70 at.% were prepared by magnetron co-sputtering of pure graphite and silicon targets.Mechanical properties (hardness, intrinsic stress), film composition (EPMA and XPS) and film structure (electron diffraction, Raman spectra) were investigated in dependence on Si concentration, substrate bias and deposition temperature. The film hardness was maximal for -45 at.% of Si and deposition temperatures 600 and 800 \u00B0C. Reflection electron diffraction indicated an amorphous structure of prepared films.Raman spectra showed that the films in the range of 35 - 70 at.% of Si always contain three bands corresponding to the Si, SiC and C clusters" . "Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering" . . "P(OC 095), P(OC 097), Z(AV0Z10100520), Z(AV0Z10100521), Z(AV0Z10100522)" . "0925-9635" . "Hydrogen-free a-C:Si films with Si concentration from 3 to 70 at.% were prepared by magnetron co-sputtering of pure graphite and silicon targets.Mechanical properties (hardness, intrinsic stress), film composition (EPMA and XPS) and film structure (electron diffraction, Raman spectra) were investigated in dependence on Si concentration, substrate bias and deposition temperature. The film hardness was maximal for -45 at.% of Si and deposition temperatures 600 and 800 \u00B0C. Reflection electron diffraction indicated an amorphous structure of prepared films.Raman spectra showed that the films in the range of 35 - 70 at.% of Si always contain three bands corresponding to the Si, SiC and C clusters"@en . . "RIV/68378271:_____/07:00096427!RIV08-AV0-68378271" . . "Diamond and Related Materials" . "a-C:Si hydrogen-free films,; hardness; raman spectroscopy; XPS"@en . . "[63ECD8C83027]" . . "Kulykovskyy, Valeriy" . . "16" . . "Tvrdost nanokompozitn\u00EDch vrstev a-C:Si deponovan\u00FDch magnetronov\u00FDm napra\u0161ov\u00E1n\u00EDm"@cs . "Vorl\u00ED\u010Dek, Vladim\u00EDr" . "Zemek, Josef" . "RIV/68378271:_____/07:00096427" . . "Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering" . . "5"^^ . . . "6"^^ . . "Vod\u00EDk neobsahuj\u00EDc\u00ED vrstvy a-C:Si s koncentrac\u00ED Si od 3 do 70 at.% byly p\u0159ipravov\u00E1ny magnetronov\u00FDm ko-sputteringem z target\u016F z \u010Dist\u00E9ho grafitu a k\u0159em\u00EDku. Mechanick\u00E9 vlastnosti (tvrdost,vnit\u0159n\u00ED pnut\u00ED),slo\u017Een\u00ED vrstev (EPMA a XPS) a struktura (elektronov\u00E1 difrakce a ramanova spektroskopie) byly zkoum\u00E1ny v z\u00E1vislosti na koncentraci Si, p\u0159edp\u011Bt\u00ED na substr\u00E1tu a depozi\u010Dn\u00ED teplot\u011B. Maximum tvrdosti bylo dosa\u017Eeno p\u0159i koncentraci Si 45 at.% a p\u0159i depozi\u010Dn\u00EDch teplot\u00E1ch 600 a 800 \u00B0C. Reflexn\u00ED elektronov\u00E1 difrakce indikovala amorfn\u00ED strukturu p\u0159ipravovan\u00FDch vrstev. Ramanovy spektra ukazuj\u00ED na existenci 3 p\u00E1s\u016F odpov\u00EDdaj\u00EDc\u00EDch klastr\u016Fm Si, SiC a C pro koncentrace Si z intervalu 35 - 70 at.%"@cs . . . . "-" . "Jastrab\u00EDk, Lubom\u00EDr" . "Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering"@en . . "Kurdymov, A." .