. "Mates, Tom\u00E1\u0161" . . . . . "Melichar, Karel" . "445420" . "Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs" . . "Hulicius, Eduard" . . "P(GA202/06/0718), P(KJB101630601), P(LC06040), P(LC510), Z(AV0Z10100521)" . . . "Hospodkov\u00E1, Alice" . "0022-0248" . . . . "[6C8A4524F40F]" . . "RIV/68378271:_____/07:00085159!RIV08-AV0-68378271" . "Vlastnosti InAs/GaAs kvantov\u00FDch te\u010Dek p\u0159er\u016Fstan\u00FDch InGaAs p\u0159ipraven\u00FDch pomoc\u00ED MOVPE"@cs . . . "RIV/68378271:_____/07:00085159" . "582;858" . "Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs" . . "8"^^ . "nanostructures; metalorganic vapor phase epitaxy; arsenides; semiconducting III-V materials"@en . "8"^^ . "298" . . "Oswald, Ji\u0159\u00ED" . "Vlastnosti InAs/GaAs kvantov\u00FDch te\u010Dek p\u0159er\u016Fstan\u00FDch InGaAs p\u0159ipraven\u00FDch pomoc\u00ED MOVPE"@cs . "Pangr\u00E1c, Ji\u0159\u00ED" . "We studied photoluminescence of InAs/GaAs quantum dots covered by InGaAs strain reducing layer (SRL). These structures show strong red shift of photoluminescence maxima with increased In content in SRL" . . . . . "4"^^ . "Studovali jsme fotoluminiscenci InAs/GaAs kvantov\u00FDch te\u010Dek zakryt\u00FDch InGaAs vrstvou redukuj\u00EDc\u00ED pnut\u00ED (SRL). Tyto struktury vykazuj\u00ED siln\u00FD \u010Derven\u00FD posun maxima fotoluminiscence se vzr\u016Fstaj\u00EDc\u00EDm obsahem In ve SRL"@cs . . . "Kuldov\u00E1, Karla" . . . "\u0160ime\u010Dek, Tomislav" . "Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs"@en . "We studied photoluminescence of InAs/GaAs quantum dots covered by InGaAs strain reducing layer (SRL). These structures show strong red shift of photoluminescence maxima with increased In content in SRL"@en . "Journal of Crystal Growth" . "-" . . . . "Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs"@en . "NL - Nizozemsko" .