"11" . "4"^^ . "Hospodkov\u00E1, Alice" . "Kuldov\u00E1, Karla" . "P(KJB101630601), Z(AV0Z10100521)" . "Hulicius, Eduard" . "6"^^ . "Pangr\u00E1c, Ji\u0159\u00ED" . . . . . . "1.3 \u03BCm emission from InAs/GaAs quantum dots"@en . "V \u010Dl\u00E1nku je pops\u00E1n velk\u00FD posun luminiscence k del\u0161\u00EDm vlnov\u00FDm d\u00E9lk\u00E1m (od 1.25 m do 1.45 m) za pokojov\u00E9 teploty pro jednovrstvou strukturu kvantov\u00FDch te\u010Dek p\u0159ikryt\u00FDch InxGa1-xAs vrstvou redukuj\u00EDc\u00ED nap\u011Bt\u00ED ve struktu\u0159e p\u0159i vzr\u016Fstaj\u00EDc\u00ED koncentraci In (od 0 % do 29 %). P\u0159\u00EDslu\u0161n\u00E9 p\u0159echody byly studov\u00E1ny v magnetick\u00E9m poli a p\u0159i r\u016Fzn\u00E9m excita\u010Dn\u00EDm v\u00FDkonu a srovn\u00E1ny s v\u00FDpo\u010Dty pomoc\u00ED jednoduch\u00E9ho modelu jedno\u010D\u00E1sticov\u00E9 efektivn\u00ED hmotnosti s prom\u011Bnnou energi\u00ED"@cs . . "RIV/68378271:_____/06:00078520" . "A strong red shift from 1.25 m to 1.45 m of room temperature photoluminescence maxima of single quantum dot layer structures covered by InxGa1-xAs strain reducing layer when increased In content (from 0 % to 29 %) is observed. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energy-dependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots" . "RIV/68378271:_____/06:00078520!RIV07-AV0-68378271" . "Melichar, Karel" . "nanostructures; metalorganic vapor phase epitaxy; arsenides; semiconducting III\u2013V materials"@en . "Oswald, Ji\u0159\u00ED" . "510553" . . "1.3 \u03BCm emise InAs/GaAs kvantov\u00FDch te\u010Dek"@cs . . . "Huml\u00ED\u010Dek, J." . . . . "3" . . . "A strong red shift from 1.25 m to 1.45 m of room temperature photoluminescence maxima of single quantum dot layer structures covered by InxGa1-xAs strain reducing layer when increased In content (from 0 % to 29 %) is observed. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energy-dependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots"@en . . . "1610-1634" . "[7117762CCB04]" . . . "K\u0159\u00E1pek, V." . . "DE - Spolkov\u00E1 republika N\u011Bmecko" . . . . "Physica Status Solidi C: conferences and critical reviews" . "Potemski, M." . . "1.3 \u03BCm emission from InAs/GaAs quantum dots"@en . "1.3 \u03BCm emission from InAs/GaAs quantum dots" . "3811;3814" . "9"^^ . "1.3 \u03BCm emission from InAs/GaAs quantum dots" . "1.3 \u03BCm emise InAs/GaAs kvantov\u00FDch te\u010Dek"@cs .