"13"^^ . "L\u00E1ska, Leo\u0161" . "Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates"@en . "[F96EC30AAFD1]" . "Due to the development and growing demends for inplantation techniques, the laser plasma as a source of multiply charged ions been investigated. This experiment concerned the characterization and optimization of laser produced Ge ion fluxes as well as the analysis of the direct implantation of these ions into SiO2 films prepared on the surface of a Si single crystal in the bulk profiles of Ge ion implantation with maximum depth of similar to 450 nm" . . . . "148;181" . . "Gammino, S." . "P(LC528), Z(AV0Z10100523), Z(AV0Z20430508)" . "Physica Scripta" . "4"^^ . . "471822" . "Due to the development and growing demends for inplantation techniques, the laser plasma as a source of multiply charged ions been investigated. This experiment concerned the characterization and optimization of laser produced Ge ion fluxes as well as the analysis of the direct implantation of these ions into SiO2 films prepared on the surface of a Si single crystal in the bulk profiles of Ge ion implantation with maximum depth of similar to 450 nm"@en . . "Rosinski, J. M." . . "Rohlena, Karel" . "T123" . "Pfeifer, Miroslav" . "RIV/68378271:_____/06:00054548" . "Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates"@en . "4"^^ . "Boody, F. P." . "SE - \u0160v\u00E9dsk\u00E9 kr\u00E1lovstv\u00ED" . . "RIV/68378271:_____/06:00054548!RIV07-AV0-68378271" . "P\u0159\u00EDm\u00E1 implantace Ge iont\u016F, produkovan\u00FDch laserov\u00FDmi pulsy o velk\u00E9 energii a n\u00EDzk\u00E9 intensit\u011B, do SiO2 vrstev na Si podlo\u017Ek\u00E1ch"@cs . . "-" . "Wolowski, J." . . "Torrisi, L." . "Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates" . . "Direct implantation of Ge ions produced by high-energy low-intensity laser pulses into SiO2 films prepared on Si substrates" . "P\u0159\u00EDm\u00E1 implantace Ge iont\u016F, produkovan\u00FDch laserov\u00FDmi pulsy o velk\u00E9 energii a n\u00EDzk\u00E9 intensit\u011B, do SiO2 vrstev na Si podlo\u017Ek\u00E1ch"@cs . "laser plasma; Ge ions; ion implantation"@en . "Kr\u00E1sa, Josef" . . . . "Parys, P." . . . "Mezzasalma, A." . . . . "0031-8949" . "Vzhledem k v\u00FDvoji a rostouc\u00EDm po\u017Eadavk\u016Fm na implanta\u010Dn\u00ED techniky bylo zkoum\u00E1no laserov\u00E9 plazma jako zdroj v\u00EDcen\u00E1sobn\u00FDch iont\u016F. Experimenty zahrnuj\u00ED stanoven\u00ED charakteristik a optimalizaci toku laserem produkovan\u00FDch Ge iont\u016F a analysy p\u0159\u00EDm\u00E9 implantace t\u011Bchto iont\u016F do SiO2 vrstev na povrchu Si krystalu|. Objemov\u00FD profil implantovan\u00FDch Ge iont\u016F m\u00E1 maxim\u00E1ln\u00ED hloubku 450 nm"@cs . "Ullschmied, Ji\u0159\u00ED" . . "Badziak, J." . .