"1-4244-0396-0" . "Hlubok\u00E9 defekty v heterostruktur\u00E1ch SiC/AlGaN/GaN p\u0159ipraven\u00FDch metodou MOVPE"@cs . "ASDAM\u00B406" . "P(IAA1010404), Z(AV0Z10100521)" . . . "7"^^ . "RIV/68378271:_____/06:00043491!RIV07-AV0-68378271" . "Heterostructures SiC/AlGaN/GaN were investigated by the DLTS Metod in order to correlate activation energie of deep levels with AlGaN layer composition and 4H-SiC substr\u00E1te orientation."@en . . "4"^^ . "Boeykens, S." . . "Heterostruktury SiC/AlGaN/GaN byly zkoum\u00E1ny metodou DLTS s c\u00EDlem naj\u00EDt souvislost mezi aktiva\u010Dn\u00ED energi\u00ED hlubok\u00FDch hladin a slo\u017Een\u00EDm vrstvy AlGaN, p\u0159\u00EDpadn\u011B orientac\u00ED substr\u00E1tu 4H-SiC"@cs . "V\u00FDborn\u00FD, Zden\u011Bk" . . "2006-10-16+02:00"^^ . . "5"^^ . . "deep levels; nitride layers; 4H-SiC"@en . "Deep defects in MOVPE grown SiC/AlGaN/GaN heterostructures"@en . "Deep defects in MOVPE grown SiC/AlGaN/GaN heterostructures" . "Kri\u0161tofik, Jozef" . . "Hub\u00EDk, Pavel" . . . . . "Leys, M. R." . . . "Danvers, MA" . "Deep defects in MOVPE grown SiC/AlGaN/GaN heterostructures" . . . . "Deep defects in MOVPE grown SiC/AlGaN/GaN heterostructures"@en . "IEEE" . "470592" . . . . "[D6994FCDD615]" . . "Heterostructures SiC/AlGaN/GaN were investigated by the DLTS Metod in order to correlate activation energie of deep levels with AlGaN layer composition and 4H-SiC substr\u00E1te orientation." . "Smolenice Castle" . "51;54" . . "Kindl, Dobroslav" . "RIV/68378271:_____/06:00043491" . "Hlubok\u00E9 defekty v heterostruktur\u00E1ch SiC/AlGaN/GaN p\u0159ipraven\u00FDch metodou MOVPE"@cs . "Mare\u0161, Ji\u0159\u00ED J." .