"Fejfar, Anton\u00EDn" . . . . "Honda, Shinya" . . "Ogane, A." . "RIV/68378271:_____/06:00040692!RIV07-AV0-68378271" . "Honda, Shinya" . . "-" . "Annealing in water vapor as a new method for improvement of silicon thin film properties"@en . . . "3"^^ . "NL - Nizozemsko" . "\u017D\u00EDh\u00E1n\u00ED ve vodn\u00EDch par\u00E1ch jako nov\u00E1 metoda pro zlep\u0161en\u00ED vlastnost\u00ED tenk\u00FDch k\u0159em\u00EDkov\u00FDch vrstev"@cs . "[10AA511EBDF9]" . . . . "P(GD202/05/H003), P(IAA1010316), P(IAA1010413), P(SM/300/1/03), P(SN/3/172/05), Z(AV0Z10100521)" . "RIV/68378271:_____/06:00040692" . "silicon; solar cells"@en . . . "4"^^ . "Journal of Non-Crystalline Solids" . "352" . . "955;958" . "Electronic properties of poly-Si thin films fabricated by atmospheric pressure chemical vapor deposition (APCVD) were improved by annealing in H2O or D2O vapors"@en . . "0022-3093" . "465437" . . "Electronic properties of poly-Si thin films fabricated by atmospheric pressure chemical vapor deposition (APCVD) were improved by annealing in H2O or D2O vapors" . . "\u017D\u00EDh\u00E1n\u00ED ve vodn\u00EDch par\u00E1ch jako nov\u00E1 metoda pro zlep\u0161en\u00ED vlastnost\u00ED tenk\u00FDch k\u0159em\u00EDkov\u00FDch vrstev"@cs . . "Elektronick\u00E9 vlastnosti tenk\u00FDch vrstev polykrystalick\u00E9ho k\u0159em\u00EDku deponovan\u00E9ho za atmosf\u00E9rick\u00E9ho tlaku byly zlep\u0161eny \u017E\u00EDh\u00E1n\u00EDm v H2O nebo D2O par\u00E1ch"@cs . "Ko\u010Dka, Jan" . "Uraoka, Y." . "Annealing in water vapor as a new method for improvement of silicon thin film properties" . "Yamazaki, T." . "Annealing in water vapor as a new method for improvement of silicon thin film properties"@en . . . . "7"^^ . . "Annealing in water vapor as a new method for improvement of silicon thin film properties" . "Fuyuki, T." .