"3"^^ . "13" . "Zegrya, G. G." . . "Melichar, Karel" . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . . "RIV/68378271:_____/06:00039958!RIV07-AV0-68378271" . . . . "MOVPE; AlSb/InAsSb; quantum well; electroluminescence"@en . "Mikhailova, M. P." . "Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by Metal Organic Vapour Phase Epitaxy" . "\u0160ime\u010Dek, Tomislav" . "10"^^ . "Popisujeme intenzivn\u00ED elektroluminiscenci technologi\u00ED MOVPE p\u0159ipraven\u00FDch jednon\u00E1sobn\u00FDch kvantov\u00FDch jam typu I ve st\u0159edn\u00ED infra\u010Derven\u00E9 oblasti p\u0159i pokojov\u00E9 teplot\u011B. \u010Ctyrn\u00E1sobn\u00FD vzr\u016Fst intenzity emise s teplotou rostouc\u00ED z 77 do 300 K je vysv\u011Btlen vysoce \u00FA\u010Dinnou z\u00E1\u0159ivou rekombinac\u00ED elektron\u016F injektovan\u00FDch do \u00FAzk\u00E9 AlSb/InAsSb/AlSb kvantov\u00E9 j\u00E1my, co\u017E vede k potla\u010Den\u00ED Augerov\u00FDch proces\u016F"@cs . . "P(GP202/02/D069), P(IAA1010318), Z(AV0Z10100521)" . "Intense mid-infrared (\u03BB~2 \u03BCm) room temperature electroluminescence from Metal Organic Vapour Phase Epitaxy grown type-I single AlSb/InAsSb/AlSbquantum wells is reported. Four-times increase of the emission intensity with temperature increasing from 77 to 300 K can be explained by highly efficient radiative recombination of the electrons injected into narrow AlSb/InAsSb/AlSb quatum well, leading to Auger-processes suppression" . "5"^^ . "RIV/68378271:_____/06:00039958" . . "Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by Metal Organic Vapour Phase Epitaxy"@en . . . "Elektroluminiscence jednon\u00E1sobn\u00FDch kvantov\u00FDch jam p\u0159i pokojov\u00E9 teplot\u011B vyrostl\u00FDch organokovovou epitax\u00ED z plynn\u00E9 f\u00E1ze"@cs . . . "Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by Metal Organic Vapour Phase Epitaxy" . "Applied Physics Letters" . "Intense mid-infrared (\u03BB~2 \u03BCm) room temperature electroluminescence from Metal Organic Vapour Phase Epitaxy grown type-I single AlSb/InAsSb/AlSbquantum wells is reported. Four-times increase of the emission intensity with temperature increasing from 77 to 300 K can be explained by highly efficient radiative recombination of the electrons injected into narrow AlSb/InAsSb/AlSb quatum well, leading to Auger-processes suppression"@en . "Hospodkov\u00E1, Alice" . "Elektroluminiscence jednon\u00E1sobn\u00FDch kvantov\u00FDch jam p\u0159i pokojov\u00E9 teplot\u011B vyrostl\u00FDch organokovovou epitax\u00ED z plynn\u00E9 f\u00E1ze"@cs . . . . . "132102/1;132102/3" . . . "Pangr\u00E1c, Ji\u0159\u00ED" . . "Yakovlev, Yu. P." . . . "Moiseev, K. D." . "[5FE9C06996E5]" . "Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by Metal Organic Vapour Phase Epitaxy"@en . "Hulicius, Eduard" . "Ivanov, E. V." . . "0003-6951" . "88" . . "497974" .