. "Jurka, Vlastimil" . "Current-voltage characteristics of GaSb p-n homojunctions prepared by MOVPE were measured in wide temperature range. It was shown that the charge transport is strongly affected by the growth rate of GaSb epitaxial layers" . "Volt-amp\u00E9rov\u00E9 charakteristiky homogenn\u00EDch p\u0159echod\u016F v GaSb p\u0159ipraven\u00FDch metodou MOVPE byly m\u011B\u0159eny v \u0161irok\u00E9m oboru teplot. Uk\u00E1zalo se, \u017Ee p\u0159enos n\u00E1boje je v\u00FDrazn\u011B ovlivn\u011Bn rychlost\u00ED r\u016Fstu epitaxn\u00EDch vrstev GaSb"@cs . "Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy" . . . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . . "5"^^ . . . "Hub\u00EDk, Pavel" . "Hulicius, Eduard" . "Tou\u0161kov\u00E1, J." . . "Mare\u0161, Ji\u0159\u00ED J." . "GaSb; p-n homojunction; charge transport; native defects"@en . "95" . "Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy" . "8"^^ . "567882" . "[12523EA027AD]" . . . "9"^^ . "0021-8979" . "Kindl, Dobroslav" . . . . "Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy"@en . "RIV/68378271:_____/04:00100050" . "4" . . "Kri\u0161tofik, Jozef" . "P(GA202/03/0410), P(IAA1010404), P(KSK1010104), Z(AV0Z1010914), Z(MSM 113200002)" . "Journal of Applied Physics" . . . "1811;1815" . . . "\u0160ime\u010Dek, Tomislav" . "Vliv rychlosti r\u016Fstu na transport n\u00E1boje v homogenn\u00EDch p\u0159echodech z GaSb p\u0159ipraven\u00FDch epitax\u00ED z organokov\u016F"@cs . "Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy"@en . . . . "RIV/68378271:_____/04:00100050!RIV/2005/AV0/A02005/N" . . . . . "Pangr\u00E1c, Ji\u0159\u00ED" . "Vliv rychlosti r\u016Fstu na transport n\u00E1boje v homogenn\u00EDch p\u0159echodech z GaSb p\u0159ipraven\u00FDch epitax\u00ED z organokov\u016F"@cs . . . . "Current-voltage characteristics of GaSb p-n homojunctions prepared by MOVPE were measured in wide temperature range. It was shown that the charge transport is strongly affected by the growth rate of GaSb epitaxial layers"@en .