. "629245" . . "13"^^ . . . "Higher content of hydrogen at lower T s facilitatesformation od order silicon phase even close to room temperature (the sample grown at 35 o C had 30at% of hydrogen and crystallinity .appreq.60%), providing a technological window for deposition of silicon thin films on cheap polymer substrates with electronic properties suitable for cells."@en . "Japanese Journal of Applied Physics. Pt. 2" . "8"^^ . . . . "Structure and properties of silicon thin films deposited at low substrate temperatures." . "Stuchl\u00EDkov\u00E1, The-Ha" . "[DF23299C6D20]" . "Structure and properties of silicon thin films deposited at low substrate temperatures."@en . "Uyama, H." . . "Ko\u010Dka, Jan" . . . "42" . . . "L987;L989" . "Mates, Tom\u00E1\u0161" . "JP - Japonsko" . . "RIV/68378271:_____/03:02030495" . . . . . "0021-4922" . . "Luterov\u00E1, Kate\u0159ina" . "Pelant, Ivan" . . "Structure and properties of silicon thin films deposited at low substrate temperatures." . "Ro, K." . . "a-Si:H; .mu.c-Si:H; low-temperature growth; plastic substrates; crystallinity; hydrogen; electron transport"@en . . "Fejfar, Anton\u00EDn" . . . "Mackov\u00E1, Anna" . . . . "3"^^ . "RIV/68378271:_____/03:02030495!RIV/2004/AV0/A02004/N" . "Ito, M." . . . "Ledinsk\u00FD, Martin" . "8B" . "Fojt\u00EDk, Petr" . . "Structure and properties of silicon thin films deposited at low substrate temperatures."@en . "0"^^ . "0"^^ . "Higher content of hydrogen at lower T s facilitatesformation od order silicon phase even close to room temperature (the sample grown at 35 o C had 30at% of hydrogen and crystallinity .appreq.60%), providing a technological window for deposition of silicon thin films on cheap polymer substrates with electronic properties suitable for cells." . . "Baumruk, V." . "P(GA202/03/0789), P(IAA1010316), P(IAB2949101), Z(AV0Z1010914), Z(AV0Z1048901), Z(MSM 113200002)" . . .