. . "Lecce" . . . "P(IAA1010318), P(KSK1010104), Z(AV0Z1010914)" . . "Lecce [IT]" . . "0"^^ . "12;18" . "0"^^ . . . "2003-06-08+02:00"^^ . "Lasers with thin strained InAs layers in GaAs - electron-optical characterisation and operation at elevated temperatures."@en . . . "Contribution presents the electroluminescence, photoabsorption and polarisation properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures (above 25 o C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperatures operation range."@en . . . "Lasers with thin strained InAs layers in GaAs - electron-optical characterisation and operation at elevated temperatures." . "Ecotekne Congress Centre" . . . "Pangr\u00E1c, Ji\u0159\u00ED" . "Melichar, Karel" . "613236" . "Hulicius, Eduard" . . "Lasers with thin strained InAs layers in GaAs - electron-optical characterisation and operation at elevated temperatures." . . "RIV/68378271:_____/03:02030379" . . "Lasers with thin strained InAs layers in GaAs - electron-optical characterisation and operation at elevated temperatures."@en . . . "Contribution presents the electroluminescence, photoabsorption and polarisation properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures (above 25 o C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperatures operation range." . "Oswald, Ji\u0159\u00ED" . . "Hospodkov\u00E1, Alice" . "Hazdra, P." . . . "European Workshop on Metalorganic Vapour Phase Epitaxy /10./." . . "strained quantum well; InAs; GaAs; electroluminescence; photoabsorption; polarization"@en . "RIV/68378271:_____/03:02030379!RIV/2004/AV0/A02004/N" . . "Ma\u010Dkal, Adam" . "\u0160ime\u010Dek, Tomislav" . "88-8305-007-X" . . . . "8"^^ . . "7"^^ . "6"^^ . "[4D0A6F2F52F6]" .