"61;66" . . "0"^^ . ".delta.(Si)-layers embeded in GaAs are investigated by transport transient methods on time scales as short as 1.mu.s down to 4K. Process of sweeping electrons from the .delta.-layer is very fast and does not exhibit any thermal activation."@en . "0031-8965" . "0"^^ . "Oswald, Ji\u0159\u00ED" . . . "1" . . "D\u00F3zsa, L." . "Dynamical behaviour of the .delta.-doped Au/GaAs Schottky barrier." . . "Mare\u0161, Ji\u0159\u00ED J." . "Dynamical behaviour of the .delta.-doped Au/GaAs Schottky barrier." . . . "DE - Spolkov\u00E1 republika N\u011Bmecko" . . "Hub\u00EDk, Pavel" . "Dynamical behaviour of the .delta.-doped Au/GaAs Schottky barrier."@en . "Dynamical behaviour of the .delta.-doped Au/GaAs Schottky barrier."@en . "[E6182750AEF4]" . "RIV/68378271:_____/03:02030095" . . "6"^^ . "P(IAA1010806), Z(AV0Z1010914)" . . ".delta.(Si)-layers embeded in GaAs are investigated by transport transient methods on time scales as short as 1.mu.s down to 4K. Process of sweeping electrons from the .delta.-layer is very fast and does not exhibit any thermal activation." . . "Kri\u0161tofik, Jozef" . . . "195" . "Physica Status solidi. a" . . . "RIV/68378271:_____/03:02030095!RIV/2004/AV0/A02004/N" . . "5"^^ . "Lipavsk\u00FD, Pavel" . "delta-doping; quantum confinement states; transient spectroscopy"@en . . . "6"^^ . "604675" . . . .