. "InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy."@en . "610071" . "InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy."@en . . "electroluminescence; isovalent .delta.-layers; photocurrent spectroscopy; MOVPE; InAs/GaAs"@en . "Hazdra, P." . "Oswald, Ji\u0159\u00ED" . . "N/A" . . "P(IAA1010806), Z(AV0Z1010914), Z(MSM 212300014)" . . . "InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy." . . "248" . . "Photocurrent, electroluminescence, and photoluminescence spectroscopy were used for the characterisation of laser structures containing InAs .delta.-layers in GaAs matrix surrounded by AlGaAs waveguide and grown by low-pressure metal organic vapour phase epitaxy." . . . "Hulicius, Eduard" . "Journal of Crystal Growth" . . . "Voves, J." . . . "NL - Nizozemsko" . . "328;332" . "Pangr\u00E1c, Ji\u0159\u00ED" . . . "RIV/68378271:_____/03:02030093!RIV/2004/AV0/A02004/N" . "InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy." . "0022-0248" . "[AFB21F4E79EF]" . "6"^^ . "5"^^ . "RIV/68378271:_____/03:02030093" . . "0"^^ . "Photocurrent, electroluminescence, and photoluminescence spectroscopy were used for the characterisation of laser structures containing InAs .delta.-layers in GaAs matrix surrounded by AlGaAs waveguide and grown by low-pressure metal organic vapour phase epitaxy."@en . . "0"^^ . . "\u0160ime\u010Dek, Tomislav" . "4"^^ . . . .