"Lasery s tenk\u00FDmi InAs vrstvami v GaAs - absorpce a elektroluminiscence"@cs . . . "Lasers with thin strained InAs layers in GaAs absorption and electroluminescence"@en . "[208CF02C2162]" . . "P\u0159\u00EDsp\u011Bvek obsahuje elektroluminiscen\u010Dn\u00ED, fotoabsorp\u010Dn\u00ED a polariza\u010Dn\u00ED vlastnosti polovodi\u010Dov\u00FDch laser\u016F s tenk\u00FDmi napjat\u00FDmi vrstvami InAs v GaAs p\u0159i zv\u00FD\u0161en\u00FDch teplot\u00E1ch (nad 25o C). Tyto lasery vykazuj\u00ED vysokou \u00FA\u010Dinnost z\u00E1\u0159iv\u00E9 rekombinace, n\u00EDzkou prahovou proudovou hustotu a \u0161irok\u00FD obor pracovn\u00EDch teplot"@cs . . "Ma\u010Dkal, Adam" . "2"^^ . . "\u010Cesk\u00E9 vysok\u00E9 u\u010Den\u00ED technick\u00E9 v Praze. Fakulta elektrotechnick\u00E1" . "Lasers with thin strained InAs layers in GaAs absorption and electroluminescence" . "RIV/68378271:_____/03:00100041!RIV/2005/AV0/A02005/N" . . . "EI20;EI21" . . . "Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25oC). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range" . "1"^^ . "Lasers with thin strained InAs layers in GaAs absorption and electroluminescence"@en . "Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25oC). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range"@en . . "P(IAA1010318), Z(AV0Z1010914)" . . "RIV/68378271:_____/03:00100041" . . "1"^^ . . "Proceedings of the International Student Conference on Electrical Engineering" . "Lasery s tenk\u00FDmi InAs vrstvami v GaAs - absorpce a elektroluminiscence"@cs . "strained quantum well; InAs; GaAs; polarisation; electroluminescence; photoabsorption"@en . . "Praha" . . "Praha" . . . . "613232" . "2003-05-22+02:00"^^ . "Lasers with thin strained InAs layers in GaAs absorption and electroluminescence" . . . .