. . "Lasers with .delta. In As layers in GaAs." . "\u0160ime\u010Dek, Tomislav" . "651581" . "7"^^ . "Voves, J." . . . "NL - Nizozemsko" . "0921-5107" . . "5"^^ . "Materials Science and Engineering. B" . "9"^^ . "Electroluminescence of lasers with different number (1,3,5,7) of .delta. InAs layers in GaAs prepared by Low Pressure Metal-Organic Vapor Phase Epitaxy was investigated. Results show that by increasing the number of .delta. InAs layers and decreasing the distance between these layers it is possible to decrease the lasing emission energy below 1.15 eV."@en . . "Hulicius, Eduard" . . "Oswald, Ji\u0159\u00ED" . "Pangr\u00E1c, Ji\u0159\u00ED" . . . . "Hazdra, P." . . "Electroluminescence of lasers with different number (1,3,5,7) of .delta. InAs layers in GaAs prepared by Low Pressure Metal-Organic Vapor Phase Epitaxy was investigated. Results show that by increasing the number of .delta. InAs layers and decreasing the distance between these layers it is possible to decrease the lasing emission energy below 1.15 eV." . . "P(GA102/99/0414), Z(AV0Z1010914), Z(MSM 212300014)" . "Pet\u0159\u00ED\u010Dek, Otto" . . "Kuldov\u00E1, Karla" . . . "Lasers with .delta. In As layers in GaAs."@en . . "RIV/68378271:_____/02:02020006" . . "N/A" . . "Lasers with .delta. In As layers in GaAs." . . "312;316" . . . "Melichar, Karel" . "[2E4D4C03A07C]" . "88" . "0"^^ . "0"^^ . . . "semiconductor lasers; - isovalent .delta. layers; - InAs; GaAs; - electroluminescence"@en . . . "Lasers with .delta. In As layers in GaAs."@en . . "RIV/68378271:_____/02:02020006!RIV/2003/AV0/A02003/N" .