"Rehspringer, J. L." . "Pelant, Ivan" . "H\u00F6nerlage, B." . "Materials Science and Engineering. C" . "RIV/68378271:_____/02:02020003!RIV/2003/AV0/A02003/N" . "0"^^ . "NL - Nizozemsko" . . "Valenta, J." . "0"^^ . . . . "nanocrystalline silicon; - photoluminescence; - porous silicon"@en . . . "4"^^ . "[0EE15C0E41F8]" . . . "658218" . . . "Photoluminescence properties of sol-gel derived SiO 2 layers doped with porous silicon."@en . . . "Photoluminescence properties of sol-gel derived SiO 2 layers doped with porous silicon." . . "The new material was fabricated using a low cost way by incorporating Si-nc into a sol-gel derived SiO 2 matrix. The sol-gel layers exhibit bright red photoluminescence (PL) under UV lamp excitation at room temperature."@en . . . . "Ohlmann, D." . "\u0160vr\u010Dek, Vladim\u00EDr" . "Gilliot, P." . "10"^^ . "19" . . "N/A" . "Cr\u00E9gut, O." . "Photoluminescence properties of sol-gel derived SiO 2 layers doped with porous silicon."@en . "0928-4931" . "Chvojka, T." . "RIV/68378271:_____/02:02020003" . "2"^^ . "The new material was fabricated using a low cost way by incorporating Si-nc into a sol-gel derived SiO 2 matrix. The sol-gel layers exhibit bright red photoluminescence (PL) under UV lamp excitation at room temperature." . "233;236" . . "P(IAA1010809), P(IAB1112901), P(IAB2949101), Z(AV0Z1010914), Z(MSM 123100001)" . . . . "Photoluminescence properties of sol-gel derived SiO 2 layers doped with porous silicon." . "Dian, J." .