. . "Charge transport was studied by means of I-V characteristics in different SI-GaAs-based structures. Supression of the reverse current and increase of the breakdown voltage in the system with the LT-MBE layer has been explained by a blocking of the minority carrier injection by this layer." . "Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface" . "RIV/68378271:_____/02:00021397!RIV06-AV0-68378271" . . "Experiment\u00E1ln\u00ED d\u016Fkazy extrakce minoritn\u00EDch nosi\u010D\u016F n\u00E1boje v SI-GaAs a v rozhran\u00ED LT MBE GaAs"@cs . "Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface" . . . "Frigeri, P." . "RIV/68378271:_____/02:00021397" . . . "65;70" . "Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface"@en . "[62F265BB1256]" . "2"^^ . "Charge transport was studied by means of I-V characteristics in different SI-GaAs-based structures. Supression of the reverse current and increase of the breakdown voltage in the system with the LT-MBE layer has been explained by a blocking of the minority carrier injection by this layer."@en . . "Asilomar Cafifornia" . . . "Dubeck\u00FD, F." . "6"^^ . "F\u00F6rster, A." . . "Experiment\u00E1ln\u00ED d\u016Fkazy extrakce minoritn\u00EDch nosi\u010D\u016F n\u00E1boje v SI-GaAs a v rozhran\u00ED LT MBE GaAs"@cs . "3-932392-39-6" . "8"^^ . "Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface"@en . "Hub\u00EDk, Pavel" . . . "semi-insulating GaAs; LT-MBE GaAs; charge transport"@en . "2002-09-02+02:00"^^ . . "Proc. of the 4th Symposium on Non-Stoichiometric III-V Compounds," . "Lehrstuhl f\u00FCr Mikrocharakterisierung" . "Kri\u0161tofik, Jozef" . "Z(AV0Z1010914)" . . "Ferrari, C." . . . "645707" . "Zat\u00B4ko, B." . "Kordo\u0161, P." . "University of Erlangen" . "M\u011B\u0159en\u00EDm voltamp\u00E9rov\u00FDch charakteristik byl studov\u00E1n transport n\u00E1boje v r\u016Fzn\u00FDch struktur\u00E1ch zalo\u017Een\u00FDch na SI-GaAs. Potla\u010Den\u00ED z\u00E1v\u011Brn\u00E9ho proudu a zv\u00FD\u0161en\u00ED pr\u016Frazn\u00E9ho nap\u011Bt\u00ED v syst\u00E9mu s vrstvou LT-MBE bylo vysv\u011Btleno blokov\u00E1n\u00EDm minoritn\u00EDch nositel\u016F n\u00E1boje touto cestou."@cs .