. "RIV/68378271:_____/01:02010279!RIV/2003/AV0/A02003/N" . "0"^^ . "0"^^ . "1063-7850" . "Molchanov, S. S." . . "Broken-gap heterojunction in the p-GaSb- n-InAs 1-x Sb x (0.le.x.le.0.18) system."@en . "Yakovlev, Yu. P." . "Broken-gap heterojunction in the p-GaSb- n-InAs 1-x Sb x (0.le.x.le.0.18) system." . . . "Technical Physics Letters" . "4"^^ . "966;968" . "Epitaxial InAs 1-xSb x layers with the Sb content 0.le.x.le.0.18 were grown by metalorganic vapor phase epitaxy (MOVPE) on p-GaSb and n-InAs substrates. The photoluminescence (PL) spectra of the heterostructures were measured at T=77 K. The experiment PL data were used to study variation of the bandgap width as a function of the InAsSb solid solution composition."@en . "MOVPE; - photoluminiscene; - InAs 1-xSb x layers"@en . . . "674709" . "RU - Rusk\u00E1 federace" . . . "Grebenshchikova, E. A." . . "Broken-gap heterojunction in the p-GaSb- n-InAs 1-x Sb x (0.le.x.le.0.18) system." . "27" . . "Pangr\u00E1c, Ji\u0159\u00ED" . "Z(AV0Z1010914)" . "Epitaxial InAs 1-xSb x layers with the Sb content 0.le.x.le.0.18 were grown by metalorganic vapor phase epitaxy (MOVPE) on p-GaSb and n-InAs substrates. The photoluminescence (PL) spectra of the heterostructures were measured at T=77 K. The experiment PL data were used to study variation of the bandgap width as a function of the InAsSb solid solution composition." . "11" . . "Hulicius, Eduard" . "Broken-gap heterojunction in the p-GaSb- n-InAs 1-x Sb x (0.le.x.le.0.18) system."@en . . . "RIV/68378271:_____/01:02010279" . "Zotova, N. V." . . "Kizhaev, S. S." . . "[73AD82EB0C96]" . "\u0160ime\u010Dek, Tomislav" . . "9"^^ . . "3"^^ . . "Melichar, Karel" .