"Hub\u00EDk, Pavel" . "RIV/68378271:_____/00:02000429" . "P(GA202/99/0410), P(IAA1010806), P(IAA1010807), Z(AV0Z1010914)" . "11" . . . . "Deep levels in GaAs due to Si .delta. doping."@en . "7"^^ . . "RIV/68378271:_____/00:02000429!RIV/2003/AV0/A02003/N" . "88" . . . "Mal\u00FD, Jan" . . "0"^^ . "Mare\u0161, Ji\u0159\u00ED J." . . . "0"^^ . "Deep levels in GaAs due to Si .delta. doping."@en . . "6488;6494" . "708117" . . "Delta(Si)-doped GaAs samples grown by metalorganic vapor phase epitaxy are studied by capacitance-voltage and deep level transient spectroscopy techniques. A ditailed analysis of the DLTS signal is performed." . "Kri\u0161tofik, Jozef" . "6"^^ . . . "6"^^ . "[5032B6332BC5]" . "Hulicius, Eduard" . . "Deep levels in GaAs due to Si .delta. doping." . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . . "Journal of Applied Physics" . "Pangr\u00E1c, Ji\u0159\u00ED" . . . "N/A"@en . . "Delta(Si)-doped GaAs samples grown by metalorganic vapor phase epitaxy are studied by capacitance-voltage and deep level transient spectroscopy techniques. A ditailed analysis of the DLTS signal is performed."@en . "Deep levels in GaAs due to Si .delta. doping." . . "0021-8979" . . . .