. "Silicon nanocrystals were prepared by Si+-ion implantation and subswquent annealing of SiO2 films thermally grown on a c-Si wafer. It is shown that all PL characteristics (eficiency, dynamics, temperature dependence, excitaqtion spectra) of the Si+-implanted SiO2 films bear close resemblance to those of a light-emitting porous Si and therefore are supposed similar PL origin in both materials."@en . . "Kn\u00E1pek, Petr" . "0"^^ . "Silicon nanocrystals were prepared by Si+-ion implantation and subswquent annealing of SiO2 films thermally grown on a c-Si wafer. It is shown that all PL characteristics (eficiency, dynamics, temperature dependence, excitaqtion spectra) of the Si+-implanted SiO2 films bear close resemblance to those of a light-emitting porous Si and therefore are supposed similar PL origin in both materials." . "Luterov\u00E1, Kate\u0159ina" . "0"^^ . "H\u00F6nerlage, B." . . "RIV/68378271:_____/00:02000032" . . "1434-6060" . . "4"^^ . "Temperature behavior of optical properties of Si + - implanted SiO 2 ."@en . "Rehspringer, J. L." . . . . . "Temperature behavior of optical properties of Si + - implanted SiO 2 ."@en . . "Temperature behavior of optical properties of Si + - implanted SiO 2 ." . . "European Physical Journal. D" . . . "Grob, J. J." . "10"^^ . "Pelant, Ivan" . "N/A"@en . "Valenta, J." . "Temperature behavior of optical properties of Si + - implanted SiO 2 ." . . "Dian, J." . . "4"^^ . "N/A" . . "[9FAF561C2F7C]" . . . "P(GA202/98/0669), P(IAA1010809), P(IAB1112901), Z(AV0Z1010914)" . "RIV/68378271:_____/00:02000032!RIV/2003/AV0/A02003/N" . "Nikl, Martin" . "8" . "DE - Spolkov\u00E1 republika N\u011Bmecko" . . "395;398" . . "728999" . "Muller, D." .