. "Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles"@en . . . . "0268-1242" . "Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles" . "Yatskiv, Roman" . "8"^^ . "Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time"@en . . . "RIV/67985882:_____/14:00428559" . "4" . . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . "29" . "Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time" . "\u010Cernohorsk\u00FD, Ond\u0159ej" . "10.1088/0268-1242/29/4/045017" . "Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles" . "Semiconductor Science and Technology" . . . "3"^^ . . "RIV/67985882:_____/14:00428559!RIV15-AV0-67985882" . "51105" . "000333275600019" . "Yatskiv, Roman" . . . "Maryanchuk, P. D." . "Grym, Jan" . "Komninou, Ph." . "electrophoretic deposition; Pt nanoparticles; Schottky diodes"@en . "[586AB566CEA8]" . . "I, P(LD12014)" . . "Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles"@en . . "8"^^ . "Bazioti, C." . . "Brus, V. V." . "Dimitrakopulos, G. P." . .