"I, P(GAP108/10/0253)" . . "We report on the electrochemical preparation of porous GaAs substrates suited for the lattice mismatched epitaxial growth. We show that surfaces with different pore diameter, pore spacing and surface roughness can be achieved by careful selection of the etching regime, electrolyte, and substrate"@en . "9" . . "Nohavica, Du\u0161an" . . "DE - Spolkov\u00E1 republika N\u011Bmecko" . "[7486090DDF21]" . . "000306479300001" . "Physica Status Solidi C: Current Topics in Solid State Physics" . "3"^^ . "We report on the electrochemical preparation of porous GaAs substrates suited for the lattice mismatched epitaxial growth. We show that surfaces with different pore diameter, pore spacing and surface roughness can be achieved by careful selection of the etching regime, electrolyte, and substrate" . "7" . . . "Vani\u0161, Jan" . . "Preparation of nanoporous GaAs substrates for epitaxial growth" . . "Preparation of nanoporous GaAs substrates for epitaxial growth"@en . . . "RIV/67985882:_____/12:00387641!RIV13-AV0-67985882" . "Preparation of nanoporous GaAs substrates for epitaxial growth"@en . . . . "Piksov\u00E1, K." . . "RIV/67985882:_____/12:00387641" . "4"^^ . . . "3"^^ . "161352" . "Grym, Jan" . . . "1862-6351" . . "semiconductor technology; porous semiconductors; epitaxial growth"@en . "Preparation of nanoporous GaAs substrates for epitaxial growth" .