. "Rare-earth (RE) elements present in the growth melt of the LPE process are known to have a purifying effect on the grown layers of III-V compounds. The RE atoms exhibit high chemical affinity to shallow donors. The aim of this paper is to simulate the sometimes observed situation where the gradual gettering of donor impurity leads to an inversion of the electrical conductivity type of the grown layer from n to p. Usefulness of the approach is demonstrated by interpreting results of experimental work." . "[FD991CBBF70F]" . . . . . "DE - Spolkov\u00E1 republika N\u011Bmecko" . "6"^^ . . "\u0160rob\u00E1r, Fedor" . "Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts" . "0232-1300" . "44" . . . "P(GA102/06/0153), P(GA102/09/1037), Z(AV0Z20670512)" . "RIV/67985882:_____/09:00341232!RIV10-AV0-67985882" . . "320277" . . "semiconductors"@en . . . "Crystal Research and Technology" . "000267101200004" . "RIV/67985882:_____/09:00341232" . "2"^^ . . "Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts"@en . . . "Proch\u00E1zkov\u00E1, Olga" . "Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts"@en . "2"^^ . . "6" . "Rare-earth (RE) elements present in the growth melt of the LPE process are known to have a purifying effect on the grown layers of III-V compounds. The RE atoms exhibit high chemical affinity to shallow donors. The aim of this paper is to simulate the sometimes observed situation where the gradual gettering of donor impurity leads to an inversion of the electrical conductivity type of the grown layer from n to p. Usefulness of the approach is demonstrated by interpreting results of experimental work."@en . "Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts" . .