"2008-10-12+02:00"^^ . . . . . . . . . "Piscataway, N.J" . "[AD5AA595CC4A]" . "RIV/67985882:_____/08:00346031" . "Role of rare-earth elements in the design of radiation detectors and electroluminescent sources"@en . . "semiconductor technology; rare earth elements; III-V semiconductors"@en . "ASDAM 2008" . . "\u017D\u010F\u00E1nsk\u00FD, Karel" . . "Grym, Jan" . "RIV/67985882:_____/08:00346031!RIV11-AV0-67985882" . "Role of rare-earth elements in the design of radiation detectors and electroluminescent sources" . "Zavadil, Ji\u0159\u00ED" . . "4"^^ . "Role of rare-earth elements in the design of radiation detectors and electroluminescent sources" . "IEEE Operation Center" . . . . . "Role of rare-earth elements in the design of radiation detectors and electroluminescent sources"@en . "Z(AV0Z20670512)" . . "4"^^ . "Proch\u00E1zkov\u00E1, Olga" . "393215" . "Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE\u2019s high affinity towards shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We discuss the application of p-type InP layers in radiation detectors and InGaAsP layers in electroluminescent sources."@en . "978-1-4244-2325-5" . "Smolenice" . "4"^^ . . . "Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE\u2019s high affinity towards shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We discuss the application of p-type InP layers in radiation detectors and InGaAsP layers in electroluminescent sources." . "000263223200022" .