"372362" . "Institute of Electrical and Electronic Engineers" . "IPRM 2008 - Proceedings of the 20th Indium Phosphide and Related Materials Conference" . . . "000267695700100" . . . . . "2008-05-25+02:00"^^ . "semiconductor technology; indium compounds; rare earth compounds"@en . "P(GA102/06/0153), P(GP102/08/P617), Z(AV0Z20670512)" . "[2162E9477DF5]" . "Influence of Yb and Yb2O3 on the properties of InP layers"@en . "The investigation of gettering and/or doping efficiency of Yb and Yb2O3 added into the growth process of InP epitaxial layers. Layers were examined by SIMS, low temperature PL spectroscopy, C-V and temperature dependent Hall measurements. The gettering was confirmed for both Yb and Yb2O3; doping effect, i.e. incorporation of Yb3+ into InP lattice was confirmed only for Yb addition. Dominant acceptor responsible for n-p conductivity conversion was identified as isoelectronic Yb impurity on the In site."@en . "Proch\u00E1zkov\u00E1, Olga" . "Piscataway" . . . . . . . "\u017D\u010F\u00E1nsk\u00FD, Karel" . "RIV/67985882:_____/08:00308798" . "The investigation of gettering and/or doping efficiency of Yb and Yb2O3 added into the growth process of InP epitaxial layers. Layers were examined by SIMS, low temperature PL spectroscopy, C-V and temperature dependent Hall measurements. The gettering was confirmed for both Yb and Yb2O3; doping effect, i.e. incorporation of Yb3+ into InP lattice was confirmed only for Yb addition. Dominant acceptor responsible for n-p conductivity conversion was identified as isoelectronic Yb impurity on the In site." . . . "5"^^ . . "978-1-4244-2258-6" . "4"^^ . . "Influence of Yb and Yb2O3 on the properties of InP layers" . "Influence of Yb and Yb2O3 on the properties of InP layers"@en . . . "5"^^ . "Influence of Yb and Yb2O3 on the properties of InP layers" . "Zavadil, Ji\u0159\u00ED" . "RIV/67985882:_____/08:00308798!RIV11-GA0-67985882" . "Versailles" . "Grym, Jan" . . . . "Lorin\u010D\u00EDk, Jan" . . .