"Lorin\u010D\u00EDk, Jan" . . "The main purpose of this work was the comparison of the silicon nitride prepared by the LP CVD and by the MW PE CVD from silane and ammonia gases with respect to the possibility of passivation c-Si surface layer. The properties of the silicon nitride films were studied by the surface photovoltage (SPV), FTIR and SIMS methods. The average value of the diffusion length of minority carriers in the Si samples with the LP CVD nitride was shorter and dependent on the location in the reactor."@en . "Vliv vrstev nitridu k\u0159em\u00EDku na difuzn\u00ED d\u00E9lku minoritn\u00EDch nosi\u010D\u016F v Si"@cs . "Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers" . "RIV/67985882:_____/06:00083592" . "2006-09-04+02:00"^^ . . "Ba\u0159inka, R." . . "Hlavn\u00EDm c\u00EDlem pr\u00E1ce bylo porovn\u00E1n\u00ED nitridu k\u0159em\u00EDku p\u0159ipraven\u00E9ho metodami LP CVD a MW PE CVD ze silanu a \u010Dpavku s ohledem na mo\u017Enost pasivace c-Si povrchov\u00FDch vrstev. Vlastnosti vrstev nitridu k\u0159em\u00EDku byly studov\u00E1ny metodami SPV, FTIR a SIMS. Pr\u016Fm\u011Brn\u00E1 hodnota difuzn\u00ED d\u00E9lky minoritn\u00EDch nosi\u010D\u016F v Si vzorc\u00EDch s LP CVD nitridem byla krat\u0161\u00ED a z\u00E1visela na m\u00EDst\u011B v reaktoru."@cs . "RIV/67985882:_____/06:00083592!RIV08-AV0-67985882" . "[78CFDA6AD2E6]" . "1"^^ . "Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers" . "Poruba, A." . "Proceedings of the International Conference Twentyfirst European Photovoltaic Solar Energy" . . . "Z(AV0Z20670512)" . "Tou\u0161ek, J." . "3"^^ . "3-936338-20-5" . "M\u00FCnchen" . . . "Hl\u00EDdek, P." . "solar cells; hydrogen; plasma"@en . "The main purpose of this work was the comparison of the silicon nitride prepared by the LP CVD and by the MW PE CVD from silane and ammonia gases with respect to the possibility of passivation c-Si surface layer. The properties of the silicon nitride films were studied by the surface photovoltage (SPV), FTIR and SIMS methods. The average value of the diffusion length of minority carriers in the Si samples with the LP CVD nitride was shorter and dependent on the location in the reactor." . . . . "WIP-Renewable Energies" . "Vliv vrstev nitridu k\u0159em\u00EDku na difuzn\u00ED d\u00E9lku minoritn\u00EDch nosi\u010D\u016F v Si"@cs . "Dresden" . "479502" . . . . "Tou\u0161kov\u00E1, J." . "Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers"@en . "960;962" . "Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers"@en . . "6"^^ . . .