"560056" . "Journal of Electrical Engineering" . . "Je prezentov\u00E1no ur\u010Den\u00ED profilu voln\u00FDch nosi\u010D\u016F v GaAs na ze\u0161ikmen\u00E9m povrchu.Ze\u0161ikmen\u00ED bylo p\u0159ipraveno chemick\u00FDm lept\u00E1n\u00EDm.V\u00FDsledky jsou srovn\u00E1ny s elektrochemickou kapacitn\u011B -nap\u011B\u0165ovou metodou."@cs . "Walachov\u00E1, Jarmila" . "[DD63C7BB038D]" . . "1"^^ . "P(KSK1010104)" . "Tlaczala, M." . "RIV/67985882:_____/04:00105980" . . "55" . "9-10" . "Kinder, R." . . "RIV/67985882:_____/04:00105980!RIV/2005/AV0/A13005/N" . "Determination of free charge profiles of GaAs on a bevelled surface by PCIV is presented. The bevelled structure were prepared by chemical etching. The results are compared with the electrochemical capacitance-voltage technique."@en . . "4"^^ . . "SK - Slovensk\u00E1 republika" . "261;264" . "Radziewicz, D." . "Srn\u00E1nek, R." . . "Determination of carrier profiles on bevelled GaAs structures by PCIV method"@en . "Determination of carrier profiles on bevelled GaAs structures by PCIV method" . "1335-3632" . "Determination of carrier profiles on bevelled GaAs structures by PCIV method"@en . "impurity distribution"@en . "Hul\u00E9nyi, L." . . "Ur\u010Den\u00ED profilu nosi\u010D\u016F na ze\u0161ikmen\u00E9 GaAs struktu\u0159e pomoc\u00ED PCIV metody"@cs . . . "Sciana, B." . . "Determination of carrier profiles on bevelled GaAs structures by PCIV method" . "Ur\u010Den\u00ED profilu nosi\u010D\u016F na ze\u0161ikmen\u00E9 GaAs struktu\u0159e pomoc\u00ED PCIV metody"@cs . "7"^^ . "Determination of free charge profiles of GaAs on a bevelled surface by PCIV is presented. The bevelled structure were prepared by chemical etching. The results are compared with the electrochemical capacitance-voltage technique." . . .