"1286-0042" . "27" . "4"^^ . "High purity InP crystals were grown by liquid encapsulated Czochralski method from undoped InP melt. Wafers from the grown crystals were annealed in phosphorus ambient for 95 hours at 950oC and cooled slowly. Conversion to semi-insulating state by annealing was studied by temperature dependent Hall measurements and low temperature optical absorption spectroscopy." . "FR - Francouzsk\u00E1 republika" . . . . "Studium desti\u010Dek fosfidu indit\u00E9ho upraven\u00FDch dlouhodob\u00FDm \u017E\u00EDh\u00E1n\u00EDm p\u0159i vysok\u00FDch teplot\u00E1ch"@cs . "RIV/67985882:_____/04:00105875" . "Study of indium phosphide wafers treated by long time annealing at high temperatures"@en . . . . . "[8F15F8F49322]" . . "Study of indium phosphide wafers treated by long time annealing at high temperatures"@en . . "P(IBS2067354), Z(AV0Z2067918), Z(MSM 113200002)" . . "Study of indium phosphide wafers treated by long time annealing at high temperatures" . . . "Hall effect;deep levels;light absorption"@en . "1/3" . "Study of indium phosphide wafers treated by long time annealing at high temperatures" . "3"^^ . "Hl\u00EDdek, P." . "\u017D\u010F\u00E1nsk\u00FD, Karel" . "RIV/67985882:_____/04:00105875!RIV/2005/AV0/A13005/N" . "InP krystaly vysok\u00E9 \u010Distoty byly vyp\u011Bstov\u00E1ny metodou Czochralsk\u00E9ho s kapaln\u00FDm uz\u00E1v\u011Brem z nedopovan\u00E9 taveniny InP. Desti\u010Dky z vyp\u011Bstovan\u00FDch krystal\u016F byly \u017E\u00EDh\u00E1ny p\u0159i 950o C po 95 hodin ve fosforov\u00E9 atmosf\u00E9\u0159e a pomaly zchlazeny. Na to byla studov\u00E1na konverse do semiizola\u010Dn\u00EDho stavu teplotn\u011B z\u00E1visl\u00FDm Hallov\u00FDm m\u011B\u0159en\u00EDm a n\u00EDzkoteplotn\u00ED optickou absorp\u010Dn\u00ED spektroskopi\u00ED."@cs . "1"^^ . "197;200" . . . "European Physical Journal" . . "588793" . . . . "Pek\u00E1rek, Ladislav" . "Studium desti\u010Dek fosfidu indit\u00E9ho upraven\u00FDch dlouhodob\u00FDm \u017E\u00EDh\u00E1n\u00EDm p\u0159i vysok\u00FDch teplot\u00E1ch"@cs . "High purity InP crystals were grown by liquid encapsulated Czochralski method from undoped InP melt. Wafers from the grown crystals were annealed in phosphorus ambient for 95 hours at 950oC and cooled slowly. Conversion to semi-insulating state by annealing was studied by temperature dependent Hall measurements and low temperature optical absorption spectroscopy."@en .