"0268-1242" . "P(IBS2067354), P(KSK1010104)" . . "Gorodynskyy, Vladyslav" . . . "Deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements have been made on AlGaAs/GaAs single quantum well (QW) laser diode structures. Si-related DX centres in the n-type AlGaAs layer adjacent to the QW have been observed by DLTS with reverse bias voltage and reduced bias pulse excitation. The DLTS peak of the DX centre is wiped out at zero bias and large injection pulse excitation and a new peak appears which is interpreted as being due to an electron trap inside the QW. Identification of the electron trap has been discussed."@en . "Laserov\u00E9 diodov\u00E9 struktury s jednou kvantovou j\u00E1mou (QW) byly m\u011B\u0159eny transientn\u00ED spektroskopi\u00ED (DLTS) a z\u00E1vislostmi kapacity na nap\u011Bt\u00ED (C-V). Pomoc\u00ED DLTS s reversn\u00EDm p\u0159ilo\u017Een\u00FDm nap\u011Bt\u00EDm a exitac\u00ED reduk\u010Dn\u00EDmi pulsy byla pozorov\u00E1na DX centra od Si ve vrstv\u011B AlGaAs typu n v souseddstv\u00ED QW. Vrchol DLTS od DX centra vymiz\u00ED p\u0159i nulov\u00E9m p\u0159edp\u011Bt\u00ED a vysok\u00E9 pulsn\u00ED excitaci a objev\u00ED se nov\u00FD vrchol, kter\u00FD je vylo\u017Een, jako\u017Eto zp\u016Fsoben\u00FD elektronovou past\u00ED uvnit\u0159 QW. Identifikace elektronov\u00E9 pasti je sou\u010D\u00E1st\u00ED diskuse."@cs . . "559555" . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . "[3240572EAFBA]" . . "Deep level transient spectroscopy of AlxGa 1-x As/GaAs single-quantum-well lasers"@en . "Deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements have been made on AlGaAs/GaAs single quantum well (QW) laser diode structures. Si-related DX centres in the n-type AlGaAs layer adjacent to the QW have been observed by DLTS with reverse bias voltage and reduced bias pulse excitation. The DLTS peak of the DX centre is wiped out at zero bias and large injection pulse excitation and a new peak appears which is interpreted as being due to an electron trap inside the QW. Identification of the electron trap has been discussed." . "6"^^ . . "5"^^ . . "Fekete, D." . "7" . "Lasery Al xGa 1-x /GaAs s jednou kvantovou j\u00E1mou zkouman\u00E9 transientn\u00ED spektroskopi\u00ED hlubok\u00FDch hladin"@cs . . "Lasery Al xGa 1-x /GaAs s jednou kvantovou j\u00E1mou zkouman\u00E9 transientn\u00ED spektroskopi\u00ED hlubok\u00FDch hladin"@cs . "Deep level transient spectroscopy of AlxGa 1-x As/GaAs single-quantum-well lasers" . "Deep level transient spectroscopy of AlxGa 1-x As/GaAs single-quantum-well lasers"@en . . . . "\u017D\u010F\u00E1nsk\u00FD, Karel" . . . . "RIV/67985882:_____/04:00105854" . "semiconductor quantum wells;nanostructured materials;deep levels"@en . "Kapon, E." . "Semiconductor Science and Technology" . "Deep level transient spectroscopy of AlxGa 1-x As/GaAs single-quantum-well lasers" . "19" . . "RIV/67985882:_____/04:00105854!RIV/2005/AV0/A13005/N" . . "Kos\u00EDkov\u00E1, Jitka" . "3"^^ . . . "Rudra, A." . "897;901" .