"[D804F4EFD4AE]" . . "The characterization of InP (>10?m) layers prepared by LPE with Pr, Dy or Tb (REE) addition in the melt is reported. The conductivity has been changed from n to p type when REE exceeded certain concentration limit (0.15 wt per cent for Pr, 0.05 wt per cent for Tb and 0.03 for Dy). Comparison of PL peaks of n- and p- type conductivity laeyrs with obtained electrical data lead to conclusion that the dominant acceptor impurity for the n- and p-n type crossover is Ge for Pr addition and Mn for Tb and Dy addition." . "Grym, Jan" . . "RIV/67985882:_____/03:00105872!RIV/2005/AV0/A13005/N" . "602298" . "rare earth compounds;semiconductors;liqiud phase epitaxial growth"@en . . "4"^^ . . . . "4"^^ . "Weinheim" . "RIV/67985882:_____/03:00105872" . "Proceedings 6th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies - EXMATEC'2002" . . "Budapest" . "6"^^ . "Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by liquid phase epitaxy"@en . . . "Vliv p\u0159\u00EDm\u011Bsi Pr, Dy a Tb na fyzik\u00E1ln\u00ED vlastnosti vrstev InP p\u0159ipraven\u00FDch kapalnou epitax\u00ED"@cs . "Pr\u00E1ce se zab\u00FDv\u00E1 charakterizac\u00ED vrstev InP (>10?m) p\u0159ipraven\u00FDch kapalnou epitax\u00ED s p\u0159\u00EDm\u011Bs\u00ED Pr, Dy a Tb (REE) v r\u016Fstov\u00E9 tavenin\u011B. Elektrick\u00E1 vodivost se m\u011Bnila z typu n- na p- v p\u0159\u00EDpad\u011B, kdy koncentrace REE p\u0159es\u00E1hla jist\u00FD limit (0.15 wt% pro Pr, 0.05 wt% pro Tb a 0.03 wt% pro Dy). Porovn\u00E1n\u00EDm PL spekter s elektrick\u00FDm m\u011B\u0159en\u00EDm pro oba typy vrstev jsme do\u0161li k z\u00E1v\u011Bru, \u017Ee zm\u011Bna typu vodivosti je zp\u016Fsobena Ge, jestli\u017Ee jako p\u0159\u00EDm\u011Bs byl pou\u017Eit Pr. V p\u0159\u00EDpad\u011B, kdy jako p\u0159\u00EDm\u011Bsi bylo pou\u017Eito Tb nebo Dy, zm\u011Bnu vodivosti zp\u016Fsobuje Mn."@cs . "The characterization of InP (>10?m) layers prepared by LPE with Pr, Dy or Tb (REE) addition in the melt is reported. The conductivity has been changed from n to p type when REE exceeded certain concentration limit (0.15 wt per cent for Pr, 0.05 wt per cent for Tb and 0.03 for Dy). Comparison of PL peaks of n- and p- type conductivity laeyrs with obtained electrical data lead to conclusion that the dominant acceptor impurity for the n- and p-n type crossover is Ge for Pr addition and Mn for Tb and Dy addition."@en . "Vliv p\u0159\u00EDm\u011Bsi Pr, Dy a Tb na fyzik\u00E1ln\u00ED vlastnosti vrstev InP p\u0159ipraven\u00FDch kapalnou epitax\u00ED"@cs . "Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by liquid phase epitaxy" . "P(KSK1010104)" . . "3-527-40436-8" . "Zavadil, Ji\u0159\u00ED" . . "Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by liquid phase epitaxy"@en . "\u017D\u010F\u00E1nsk\u00FD, Karel" . . "Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by liquid phase epitaxy" . . . . "2002-05-26+02:00"^^ . . "WileyVCH Verlag" . . . . "950;955" . "Proch\u00E1zkov\u00E1, Olga" .