. . "Gong, X. Y." . "Spektroskopick\u00E1 elipsometrie anodiza\u010Dn\u00ED vrstvy na vrstv\u011B monokrystalu InAsSb p\u0159ipraven\u00E9 epitax\u00ED z taveniny"@cs . "1610-1634" . "Halaga\u010Dka, L." . . "Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy"@en . "P(KAN400100653), Z(MSM6198910016)" . "Spektroskopick\u00E1 elipsometrie anodiza\u010Dn\u00ED vrstvy na vrstv\u011B monokrystalu InAsSb p\u0159ipraven\u00E9 epitax\u00ED z taveniny"@cs . . . "396463" . . "RIV/61989100:27350/08:00019796!RIV09-MSM-27350___" . "5" . "physica status solidi (c) - current topics in solid state physics" . "Nakaoka, A." . "Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy" . . "Pi\u0161tora, Jarom\u00EDr" . "Spectroscopic ellipsometry; anodized layer; single crystal InAsSb; melt epitaxy"@en . . . "5" . . "Yamaguchi, T." . "2"^^ . . "DE - Spolkov\u00E1 republika N\u011Bmecko" . . . "Gao, Y. Z." . "Postava, Kamil" . . . "27350" . "7"^^ . "Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy" . . "[DBA705A1E13B]" . "Anodized layers on InAsSb, InSb, and InAs surfaces are characterized using phase modulation spectroscopic ellipsometry in a wide spectral range from 0.6 to 6.5 eV. Single crystal InAs0.04Sb0.94 layer was grown using melt-epitaxy (ME). Optical properties of anodized layer prepared on InAsSb single crystal are compared with those on pure single crystals of InAs and InSb. Ellipsometric spectra of were fitted to the Tauc-Lorentz model describing the anodizing layer optical functions. Clear tendency of ultraviolet shift of the band gap energy with decreasing antimony content is observed." . "Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy"@en . . "4"^^ . . "RIV/61989100:27350/08:00019796" . "Spektroskopick\u00E1 elipsometrie anodiza\u010Dn\u00ED vrstvy na vrstv\u011B monokrystalu InAsSb p\u0159ipraven\u00E9 epitax\u00ED z taveniny"@cs . . "Anodized layers on InAsSb, InSb, and InAs surfaces are characterized using phase modulation spectroscopic ellipsometry in a wide spectral range from 0.6 to 6.5 eV. Single crystal InAs0.04Sb0.94 layer was grown using melt-epitaxy (ME). Optical properties of anodized layer prepared on InAsSb single crystal are compared with those on pure single crystals of InAs and InSb. Ellipsometric spectra of were fitted to the Tauc-Lorentz model describing the anodizing layer optical functions. Clear tendency of ultraviolet shift of the band gap energy with decreasing antimony content is observed."@en .