"Czech Society of Industrial Chemistry" . "Silicon carbide for chemical application prepared by SPS method"@en . . "RIV/61389021:_____/14:00432105" . "Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering.It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration.Under standard condition, silicon carbide has no melting point (decomposes at 2700 \u00B0C \u2013 principle used for industrial production of silicon),thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless,it does not produce SiC form applicable for laboratory purposes.Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid.Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production.However, SiO2 located between the planes of growth of SiC"@en . "Silicon carbide for chemical application prepared by SPS method"@en . "2014-04-07+02:00"^^ . . . "RIV/61389021:_____/14:00432105!RIV15-GA0-61389021" . . "5"^^ . . "Mastn\u00FD, L." . . . . "Prague" . "6"^^ . . "Bro\u017Eek, Vlastimil" . "Silicon carbide for chemical application prepared by SPS method" . "Kubat\u00EDk, Tom\u00E1\u0161 Franti\u0161ek" . "4"^^ . . . "Vil\u00E9mov\u00E1, Monika" . . "I, P(GB14-36566G)" . . . "silicon carbide; spark plasma sintering; silicon carbide corrosion; impurities in silicon carbide"@en . . "Proceedings of the 2nd International Conference on Chemical Technology" . . . "978-80-86238-64-7" . . "Mikulov" . "[469BCD939A16]" . "Mu\u0161\u00E1lek, Radek" . . "Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering.It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration.Under standard condition, silicon carbide has no melting point (decomposes at 2700 \u00B0C \u2013 principle used for industrial production of silicon),thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless,it does not produce SiC form applicable for laboratory purposes.Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid.Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production.However, SiO2 located between the planes of growth of SiC" . "Silicon carbide for chemical application prepared by SPS method" . . . "44841" .