"Z(AV0Z40500505)" . "Point and structural defects in Bi2PbxTe3 single crystals" . . "NL - Nizozemsko" . "Point and structural defects in Bi2PbxTe3 single crystals" . . "441945" . . . "Navr\u00E1til, Ji\u0159\u00ED" . "0167-2738" . "Krej\u010Dov\u00E1, A." . "Hor\u00E1k, Jarom\u00EDr" . . "Solid State Ionics" . "3513;3519" . "Plech\u00E1\u010Dek, T." . "7"^^ . "Studium procesu dotace monokrystal\u016F Bi2Te3 atomy olova prok\u00E1zalo dv\u011B oblasti rozd\u00EDln\u00E9ho vlivu atom\u016F olova na zm\u011Bnu koncentrace voln\u00FDch nositel\u016F proudu. Pro koncentraci olova (1-20)x10 18 cm-3 kles\u00E1 pom\u011Br po\u010Dtu generovan\u00FDch d\u011Br na jeden atom olova z 1,06 na 0,55. Pro koncentraci olova (20x80)x10 18 cm-3 je pom\u011Br konstantn\u00ED. Tato pozorovan\u00E1 zd\u00E1nliv\u00E1 elektrick\u00E1 neaktivita zabudovan\u00FDch atom\u016F olova je vysv\u011Btlena jejich interakc\u00ED s p\u0159irozen\u00FDmi poruchami m\u0159\u00ED\u017Eky v monokrystalech Bi2Te3."@cs . . "Bodov\u00E9 a stukturn\u00ED poruchy v monokrystalech Bi2PbxTe3"@cs . . "6"^^ . . "Point and structural defects in Bi2PbxTe3 single crystals"@en . . "Bodov\u00E9 a stukturn\u00ED poruchy v monokrystalech Bi2PbxTe3"@cs . "39-40" . . "bismuth telluride"@en . "Lo\u0161\u0165\u00E1k, P." . . "The study of the doping process of Bi2Te3 by Pb atoms in wide range of lead concentration ((1.0-80.0)x10 18 cm-3) revealed two distinct areas of influence of incorporated Pb atoms on changes in free carrier concentration. While at lower concentration of incorporated Pb (up to 20x10 18 cm-3 at. Pb cm-3) the ratio of generated holes to one incorporated Pb atom falls from value of 1.06 down to 0.55, at higher concentration ((20-80)x10 18 Pb at. cm-3) the value stays constant. The observed behaviour of seeming electrical inactivity of the incorporated Pb atoms is explained by a point defect model taking into account the interaction between the entering Pb atoms and native lattice defects of Bi2Te3 crystal structure."@en . "[A7AE2464D3A2]" . "Point and structural defects in Bi2PbxTe3 single crystals"@en . "177" . . "2"^^ . "Bachan, D." . "The study of the doping process of Bi2Te3 by Pb atoms in wide range of lead concentration ((1.0-80.0)x10 18 cm-3) revealed two distinct areas of influence of incorporated Pb atoms on changes in free carrier concentration. While at lower concentration of incorporated Pb (up to 20x10 18 cm-3 at. Pb cm-3) the ratio of generated holes to one incorporated Pb atom falls from value of 1.06 down to 0.55, at higher concentration ((20-80)x10 18 Pb at. cm-3) the value stays constant. The observed behaviour of seeming electrical inactivity of the incorporated Pb atoms is explained by a point defect model taking into account the interaction between the entering Pb atoms and native lattice defects of Bi2Te3 crystal structure." . "RIV/61389013:_____/07:00083449" . . . "RIV/61389013:_____/07:00083449!RIV08-AV0-61389013" .