. "rare earth implantation; GaN; depth profiles; RBS; Raman spectroscopy; AFM"@en . "Wilhelm, R. A." . "Mikulics, M." . "59111" . . "Mackov\u00E1, Anna" . . "\u0160imek, P." . . . "2"^^ . "307" . . . "A study of the structural properties of GaN implanted by various rare-earth ions"@en . "NL - Nizozemsko" . "7" . . . "A study of the structural properties of GaN implanted by various rare-earth ions"@en . "000321722200099" . "A study of the structural properties of GaN implanted by various rare-earth ions" . "RIV/61389005:_____/13:00395263!RIV14-MSM-61389005" . . "[33F299F20C21]" . . "A study of the structural properties of GaN implanted by various rare-earth ions" . . "7"^^ . . . "GaN layers with < 0001 > crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 x 10(15)-1 x 10(16) cm(-2). The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 x 10(15) cm(-2) while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 x 10(15) cm(-2) to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement."@en . . "0168-583X" . . "Sedmidubsk\u00FD, D." . "RIV/61389005:_____/13:00395263" . . "I, P(GA106/09/0125), P(LM2011019), S" . . "10.1016/j.nimb.2012.11.079" . . "GaN layers with < 0001 > crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 x 10(15)-1 x 10(16) cm(-2). The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 x 10(15) cm(-2) while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 x 10(15) cm(-2) to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement." . . . "Malinsk\u00FD, Petr" . "Sofer, Z." . "6"^^ . . . "Nuclear Instruments & Methods in Physics Research Section B" .