"O magnetick\u00FDch vlastnostech Gd implantovan\u00E9ho GaN"@cs . "On the magnetic properties of Gd implanted GaN" . . "1"^^ . . "Kn\u00ED\u017Eek, K." . "RIV/61389005:_____/08:00313793!RIV09-AV0-61389005" . "On the magnetic properties of Gd implanted GaN"@en . . . . "The wurzite type gallium nitride doped by gadolinium, Ga1-xGdxN (x similar to 0.01-0.07), was prepared by Gd ion implantation of the parent GaN thin films deposited on sapphire substrates. The material obtained exhibits a weak ferromagnetism (FM) persisting up to 700 K. At higher Gd concentrations, the minute FM component coexists with much more pronounced Curie-type paramagnetism. In a dilute limit (x <= 0.01), the latter part is substantially reduced and the saturated FM moment reaches the value M similar to 2 mu(B)/Gd atom." . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "On the magnetic properties of Gd implanted GaN" . . . "RIV/61389005:_____/08:00313793" . . "7" . "GaN; Curie-type; FM"@en . "On the magnetic properties of Gd implanted GaN"@en . "The wurzite type gallium nitride doped by gadolinium, Ga1-xGdxN (x similar to 0.01-0.07), was prepared by Gd ion implantation of the parent GaN thin films deposited on sapphire substrates. The material obtained exhibits a weak ferromagnetism (FM) persisting up to 700 K. At higher Gd concentrations, the minute FM component coexists with much more pronounced Curie-type paramagnetism. In a dilute limit (x <= 0.01), the latter part is substantially reduced and the saturated FM moment reaches the value M similar to 2 mu(B)/Gd atom."@en . "Hardtdegen, H." . "Jir\u00E1k, Z." . . "000255043200387" . . "0021-8979" . "O magnetick\u00FDch vlastnostech Gd implantovan\u00E9ho GaN"@cs . . "P(GA104/06/0642), Z(AV0Z10100521), Z(AV0Z10480505), Z(MSM6046137302)" . . . "103" . "Mary\u0161ko, M." . "Sofer, Z." . . "[111B21957902]" . "9"^^ . . . "Sedmidubsk\u00FD, D." . . "Hejtm\u00E1nek, J." . "Buchal, C." . "3"^^ . . . "Wurzitick\u00FD typ nitridu galia dopovan\u00FD gadoliniem, Ga1-xGdxN (x v oboru 0.01-0.07), byl p\u0159ipraven ioty Gd implantovan\u00FDmi na mate\u0159skou tenkou vrstvu deponovanou na saf\u00EDrov\u00E9m substr\u00E1tu. Z\u00EDskan\u00FD materi\u00E1l vykazuje slab\u00FD feromegnetismus a\u017E do 700 K."@cs . "Journal of Applied Physics" . "Pe\u0159ina, Vratislav" . "384760" .