. "Annealing behaviour of boron atoms implanted into polyethylene-terephtalate."@en . "Rybka, V." . . . . "Hundred keV B.SUP.- ions were implanted at high fluences into polyethyleneterephtalate (PET, Mylar) and the boron depth distributions were measured by the neutron depth profiling technique (NDP). Subsequently the implanted samples were annealed isochronally to determine the diffusional, trapping and detrapping behaviour of the boron atoms. The boron depth profiles of as-implanted samples differ significantly from those predicted by TRIM code. Pronounced inwardand outward profile tails point at increased mobility and redistribution of boron atoms during the implantation. Thermal annealing to the temperatures below 100 .sup.o C doesnot change the total boron content in the 1 .mu.m thick surface layer and the boron depth profiles as well. For higher annealing temperatures a significant redistribution of boron atoms is observed."@en . "N/A"@en . "P(GA203/99/1626), P(GV202/97/K038), P(KSK1010601), Z(AV0Z1048901)" . "166/167" . . "NL - Nizozemsko" . "Hnatowicz, Vladim\u00EDr" . "\u0160vor\u010D\u00EDk, V." . "637;640" . . . "Fink, D." . "Annealing behaviour of boron atoms implanted into polyethylene-terephtalate." . . "RIV/61389005:_____/00:49000223!RIV/2003/AV0/A49003/N" . . "[4ECF697A7FBA]" . "Annealing behaviour of boron atoms implanted into polyethylene-terephtalate." . . "Annealing behaviour of boron atoms implanted into polyethylene-terephtalate."@en . "Pe\u0159ina, Vratislav" . "\u010Cerven\u00E1, Jarmila" . "704752" . . "10"^^ . "Nuclear Instruments and Methods. B" . . "Vac\u00EDk, Ji\u0159\u00ED" . "RIV/61389005:_____/00:49000223" . "0168-583X" . . . "Popok, V." . . "4"^^ . . "4"^^ . "N/A" . "Odzhaev, V." . . "0"^^ . . "Arenholz, E." . . "0"^^ . "Hundred keV B.SUP.- ions were implanted at high fluences into polyethyleneterephtalate (PET, Mylar) and the boron depth distributions were measured by the neutron depth profiling technique (NDP). Subsequently the implanted samples were annealed isochronally to determine the diffusional, trapping and detrapping behaviour of the boron atoms. The boron depth profiles of as-implanted samples differ significantly from those predicted by TRIM code. Pronounced inwardand outward profile tails point at increased mobility and redistribution of boron atoms during the implantation. Thermal annealing to the temperatures below 100 .sup.o C doesnot change the total boron content in the 1 .mu.m thick surface layer and the boron depth profiles as well. For higher annealing temperatures a significant redistribution of boron atoms is observed." . .