"Effect of Bundling on the Tangential Displacement Mode in the Raman Spectra of Semiconducting Single Walled Carbon Nanotubes during Electrochemical Charging"@en . . "RIV/61388955:_____/09:00322814" . . . "A detailed in situ Raman spectroelectrochemical analysis of semiconducting single-walled carbon nanotubes (SWCNTs) in bundles is presented. Special attention has been given to the development of the frequency and intensity of the tangential displacement mode (TG) during electrochemical charging. For negative charging, the frequency of the G+ component of the TG mode increased, decreased, and remained unchanged for the 2.18, 2.54, and 2.41 eV laser photon energies, respectively. For positive charging, only an increase in the frequency of the G+ component has been observed. The maximum frequency upshift (at the applied electrochemical potential of 1.5 V vs Ag-pseudoreference) increased for decreasing photon energies in the series from 2.54 to 2.41 and 2.18 eV. The frequency of the G+ component of the TG mode changes significantly at potentials of approximately 0.8-1.0 and -1.2 V for positive and negative doping, respectively."@en . . "RIV/61388955:_____/09:00322814!RIV09-AV0-61388955" . . . "Effect of Bundling on the Tangential Displacement Mode in the Raman Spectra of Semiconducting Single Walled Carbon Nanotubes during Electrochemical Charging"@en . "312019" . . . . "A detailed in situ Raman spectroelectrochemical analysis of semiconducting single-walled carbon nanotubes (SWCNTs) in bundles is presented. Special attention has been given to the development of the frequency and intensity of the tangential displacement mode (TG) during electrochemical charging. For negative charging, the frequency of the G+ component of the TG mode increased, decreased, and remained unchanged for the 2.18, 2.54, and 2.41 eV laser photon energies, respectively. For positive charging, only an increase in the frequency of the G+ component has been observed. The maximum frequency upshift (at the applied electrochemical potential of 1.5 V vs Ag-pseudoreference) increased for decreasing photon energies in the series from 2.54 to 2.41 and 2.18 eV. The frequency of the G+ component of the TG mode changes significantly at potentials of approximately 0.8-1.0 and -1.2 V for positive and negative doping, respectively." . . "V pr\u00E1ci p\u0159edkl\u00E1d\u00E1me detailn\u00ED anal\u00FDzu chov\u00E1n\u00ED shluk\u016F polovodiv\u00FDch jednost\u011Bnn\u00FDch uhl\u00EDkov\u00FDch nanotub (SWCNT) pomoc\u00ED in situ Ramansk\u00E9 spektroelektrochemie. Zvl\u00E1\u0161tn\u00ED pozornost byla v\u011Bnov\u00E1na v\u00FDvoji frekvence a intensity tangenci\u00E1ln\u00EDho modu (TG) v pr\u016Fb\u011Bhu elektrochemick\u00E9ho dopov\u00E1n\u00ED.V p\u0159\u00EDpad\u011B negativn\u00EDho nab\u00EDjen\u00ED se frekvence G+ komponenty TG modu sni\u017Eovala, zvy\u0161ovala a nem\u011Bnila v p\u0159\u00EDpad\u011B postupn\u00FDch excitac\u00ED lasery o energii 2.18 eV, 2.54 eV a 2.41 eV. V p\u0159\u00EDpad\u011B pozitivn\u00EDho nab\u00EDjen\u00ED byl pozorov\u00E1n pouze posun G+ modu k vy\u0161\u0161\u00EDm frekvenc\u00EDm. Maxim\u00E1ln\u00ED frekven\u010Dn\u00ED posun (pozorovan\u00FD p\u0159i potenci\u00E1lu 1.5 V vs. Ag-pseudorefernce) se zvy\u0161oval, pokud se sni\u017Eovala energie excita\u010Dn\u00EDch foton\u016F a to v \u0159ad\u011B od 2.54 k 2.41 a 2.18 eV. Frekvence G+ komponenty TG modu se v\u00FDznamn\u011B m\u011Bnila a\u017E v oblasti potenci\u00E1l\u016F 0.8-1.0 a -1.2 V v p\u0159\u00EDpad\u011B positivn\u00EDho a negativn\u00EDho dopov\u00E1n\u00ED."@cs . "Vliv shlukov\u00E1n\u00ED polovodiv\u00FDch jednost\u011Bnn\u00FDch nanotub na tangenci\u00E1ln\u00ED mod v Ramansk\u00FDch spektrech"@cs . "1932-7447" . . . . "113" . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "4" . "P(GC203/07/J067), P(IAA400400804), P(IAA400400911), P(KAN200100801), P(LC510), Z(AV0Z40400503)" . . . "spectroelectrochemistry; fullerene; renormalization"@en . . "6"^^ . . "Kalb\u00E1\u010D, Martin" . "Journal of Physical Chemistry C" . "Effect of Bundling on the Tangential Displacement Mode in the Raman Spectra of Semiconducting Single Walled Carbon Nanotubes during Electrochemical Charging" . . . "3"^^ . "[6523E9EB6723]" . . . "Kavan, Ladislav" . . "Dunsch, L." . "Vliv shlukov\u00E1n\u00ED polovodiv\u00FDch jednost\u011Bnn\u00FDch nanotub na tangenci\u00E1ln\u00ED mod v Ramansk\u00FDch spektrech"@cs . "2"^^ . "Effect of Bundling on the Tangential Displacement Mode in the Raman Spectra of Semiconducting Single Walled Carbon Nanotubes during Electrochemical Charging" .