. . "Thin Nickel Oxide Layers Prepared by Reactive Ion Beam Sputtering: Fabrication and the Study of Electrophysical Parameters" . . "S" . "978-80-87294-32-1" . . "NANOCON 2012 Conference Proceedings 4th International conference" . "Nickel oxide, Ion Beam Sputtering, van der Pauw"@en . . "174347" . . "Lavrentiev, Vasily" . "Thin Nickel Oxide Layers Prepared by Reactive Ion Beam Sputtering: Fabrication and the Study of Electrophysical Parameters"@en . . "6"^^ . . . "2012-10-23+02:00"^^ . "Thin Nickel Oxide Layers Prepared by Reactive Ion Beam Sputtering: Fabrication and the Study of Electrophysical Parameters" . "Bej\u0161ovec, V\u00E1clav" . . "Hor\u00E1k, Pavel" . "6"^^ . "Khun, Josef" . . "Thin Nickel Oxide Layers Prepared by Reactive Ion Beam Sputtering: Fabrication and the Study of Electrophysical Parameters"@en . "22340" . "Vac\u00EDk, Ji\u0159\u00ED" . "3"^^ . "Thin nickel oxide layers (thickness ca 50 and 100 nm) for sensorics were fabricated by ion beam sputtering method with subsequent annealing. Ion beam formed from a mixture of argon and oxygen was used to sputter the nickel foil. Different volume ratios of argon:oxygen in mixture were used, ranging from 1:0 to 1:4. Deposited layers were characterized in as-deposited state and after annealing at temperature of 400\u00B0C. The study of electrophysical properties (sheet resistance, mobility and concentration of charge carriers) was performed by four point Van der Pauw technique and Hall measurements respectively. Hall measurements revealed majority charge carriers to be electrons. For as-deposited layers electron surface concentration decreases with increasing amount of oxygen in ion beam and is in range (5 - 23) x 10^20 m^-2 for above mentioned range of argon:oxygen ratios. According to this trend the sheet resistance of the layers increases with higher amount of oxygen in ion beam in the interval of values (40 - 420) ohm/."@en . . . . . "RIV/60461373:22340/12:43893929!RIV13-MSM-22340___" . . "Brno" . "TANGER" . "Thin nickel oxide layers (thickness ca 50 and 100 nm) for sensorics were fabricated by ion beam sputtering method with subsequent annealing. Ion beam formed from a mixture of argon and oxygen was used to sputter the nickel foil. Different volume ratios of argon:oxygen in mixture were used, ranging from 1:0 to 1:4. Deposited layers were characterized in as-deposited state and after annealing at temperature of 400\u00B0C. The study of electrophysical properties (sheet resistance, mobility and concentration of charge carriers) was performed by four point Van der Pauw technique and Hall measurements respectively. Hall measurements revealed majority charge carriers to be electrons. For as-deposited layers electron surface concentration decreases with increasing amount of oxygen in ion beam and is in range (5 - 23) x 10^20 m^-2 for above mentioned range of argon:oxygen ratios. According to this trend the sheet resistance of the layers increases with higher amount of oxygen in ion beam in the interval of values (40 - 420) ohm/." . . "Vr\u0148ata, Martin" . "RIV/60461373:22340/12:43893929" . "[4FA502783C49]" . "Ostrava" . .