. . . . "P(GAP108/11/0894)" . "Raman spectroscopy; silicon carbice; Si ohmic contacts"@en . . "978-80-214-4985-5" . "3"^^ . "Mach\u00E1\u010D, Petr" . . "4"^^ . "The goal of our work was preparation of the Si/SiC type ohmic contacts under various conditions. Si/SiC contact structures annealed in an argon atmosphere are of worse contact resistivity in comparison with the same structures annealed under vacuum. Low Ar pressure annealing provides good surface morphology. The secondary contacts seem to combine only favorable characteristics of the two processes." . "RIV/60461373:22310/14:43898154" . "Vysok\u00E9 u\u010Den\u00ED technick\u00E9 v Brn\u011B" . . "3"^^ . . "2014-06-25+02:00"^^ . . "[35D6E5C59F52]" . . "Cicho\u0148, Stanislav" . . "Preparation of Si/SiC ohmic contacts in different environments"@en . "The goal of our work was preparation of the Si/SiC type ohmic contacts under various conditions. Si/SiC contact structures annealed in an argon atmosphere are of worse contact resistivity in comparison with the same structures annealed under vacuum. Low Ar pressure annealing provides good surface morphology. The secondary contacts seem to combine only favorable characteristics of the two processes."@en . "Brno" . . . "Brno" . "39056" . "RIV/60461373:22310/14:43898154!RIV15-GA0-22310___" . . . "Preparation of Si/SiC ohmic contacts in different environments"@en . . "EDS'13 IMAPS CS International Conference Proceedings" . . "Preparation of Si/SiC ohmic contacts in different environments" . "Preparation of Si/SiC ohmic contacts in different environments" . "22310" . . "Konr\u00E1d, Peter" .