. . "Silicon carbide; XPS analysis; Raman spectroscopy; Graphene"@en . "[B80FB802FB65]" . "Vysok\u00E9 u\u010Den\u00ED technick\u00E9 v Brn\u011B" . . "4"^^ . "Brno" . . "Brno" . . "22310" . "5"^^ . . . "Epitaxial graphene on 4H-SiC" . "RIV/60461373:22310/12:43894446!RIV13-GA0-22310___" . . "Mi\u0161kov\u00E1, Linda" . "Epitaxial graphene on 4H-SiC"@en . . "In this work, features of graphene layers were studied with the aim to prepare monolayer graphene. Graphene was prepared by the method of epitaxy growth on 4H-SiC. We applied an annealing both in vacuum and in an Ar atmosphere. The formed graphene layers were analyzed by means of Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Monolayer graphene structures were prepared by an annealing at 1555 \u00B0C in an Ar atmosphere. Results produced by Raman spectroscopy were confirmed by XPS analysis."@en . . "Proceedings EDS'11 IMAPS CS International Conference" . "Epitaxial graphene on 4H-SiC" . "In this work, features of graphene layers were studied with the aim to prepare monolayer graphene. Graphene was prepared by the method of epitaxy growth on 4H-SiC. We applied an annealing both in vacuum and in an Ar atmosphere. The formed graphene layers were analyzed by means of Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Monolayer graphene structures were prepared by an annealing at 1555 \u00B0C in an Ar atmosphere. Results produced by Raman spectroscopy were confirmed by XPS analysis." . "Mach\u00E1\u010D, Petr" . . "Cicho\u0148, Stanislav" . . . "RIV/60461373:22310/12:43894446" . . . . "Epitaxial graphene on 4H-SiC"@en . "2012-06-28+02:00"^^ . . "978-80-214-4303-7" . . "P(GAP108/11/0894)" . . . "4"^^ . . "Fidler, Tom\u00E1\u0161" . "134614" .