. "22310" . "We present a growth of Ga1-xMnxN layers by MOVPE. GaN templates were grown on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers, (MCp)2Mn was used as a Mn - precursor. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimal partially coalesced layer of pure GaN. A direct deposition of GaN:Mn layer on low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films." . "Vrstvy a povlaky 2009" . . "GaN:Mn layers growth by MOVPE" . "Sofer, Zden\u011Bk" . "Digital Graphic" . "Jurek, Karel" . "We present a growth of Ga1-xMnxN layers by MOVPE. GaN templates were grown on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers, (MCp)2Mn was used as a Mn - precursor. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimal partially coalesced layer of pure GaN. A direct deposition of GaN:Mn layer on low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films."@en . . "4"^^ . "Stejskal, Josef" . . . . . . "V\u00E1clav\u016F, M." . . "RIV/60461373:22310/09:00021758!RIV10-MSM-22310___" . . "Ro\u017Enov pod Radho\u0161t\u011Bm" . "RIV/60461373:22310/09:00021758" . . "3"^^ . "978-80-969310-9-5" . "Tren\u010D\u00EDn" . "GaN:Mn layers growth by MOVPE"@en . "Mary\u0161ko, M." . . "Hejtm\u00E1nek, J." . "315956" . "GaN:Mn layers growth by MOVPE"@en . . "2009-09-30+02:00"^^ . . "P(GA104/06/0642), Z(MSM6046137302)" . "Sedmidubsk\u00FD, David" . . "dilute magnetic semiconductors; GaN; MOVPE; magnetic properties"@en . . "Mackov\u00E1, A." . "8"^^ . . "[79510212178F]" . . "GaN:Mn layers growth by MOVPE" . . . .