. "978-80-86742-25-0" . "Optoelectronics; GaN layers; dotation"@en . . . . "V\u00FDzkum vlastnost\u00ED vrstev GaN dotovan\u00FDch ionty Er3+ a Er3++Yb3+"@cs . "V\u00FDzkum vlastnost\u00ED vrstev GaN dotovan\u00FDch ionty Er3+ a Er3++Yb3+"@cs . "22310" . "P(GA102/06/0424)" . "V\u00FDzkum vlastnost\u00ED vrstev GaN dotovan\u00FDch ionty Er3+ a Er3++Yb3+"@cs . "Pe\u0159ina, V." . "Investigation properties of GaN layers doped with ions using the transmittance measurement"@en . "5"^^ . "\u0160pirkov\u00E1, Jarmila" . "Investigation properties of GaN layers doped with ions using the transmittance measurement"@en . . . "373242" . . "H\u00FCttel, Ivan" . . "Investigation properties of GaN layers doped with ions using the transmittance measurement"@en . "Oswald, J." . . "RIV/60461373:22310/08:00020128!RIV09-GA0-22310___" . "2008-08-27+02:00"^^ . "Prajzler, V\u00E1clav" . . "2"^^ . . . . "[CCB7DF4EDF40]" . . "Investigation properties of GaN layers doped with ions using the transmittance measurement" . "Agentura Action M" . "6"^^ . . "Investigation properties of GaN layers doped with ions using the transmittance measurement" . . "Praha" . "Photonics Prague 2008, The 6th International Conference on Photonics, Devices and Systems" . "Praha" . "Investigation properties of GaN layers doped with ions using the transmittance measurement" . . "RIV/60461373:22310/08:00020128" .