"Digital Graphic" . "4"^^ . "Sborn\u00EDk p\u0159\u00EDsp\u011Bvk\u016F VI. ro\u010Dn\u00EDku konference Vrstvy a povlaky 2007" . "On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 \u00B0C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr."@cs . "Sofer, Zden\u011Bk" . . . "Termodynamick\u00E9 aspekty p\u0159\u00EDpravy epitaxn\u00EDch vrstev GaN:Cr metodou MOVPE"@cs . . "P(GA104/06/0642), Z(MSM6046137302)" . "On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 \u00B0C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr."@en . "Termodynamick\u00E9 aspekty p\u0159\u00EDpravy epitaxn\u00EDch vrstev GaN:Cr metodou MOVPE" . "Thermodynamic aspects of GaN:Cr epitaxial layers grown by MOVPE"@en . . . "Plze\u0148" . "Termodynamick\u00E9 aspekty p\u0159\u00EDpravy epitaxn\u00EDch vrstev GaN:Cr metodou MOVPE"@cs . "On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 \u00B0C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr." . . "22310" . . . "Stejskal, Josef" . . "GaN; dilute magnetic semiconductors; spintronics; thermodynamics"@en . "79-84" . "[06BF53D8B073]" . . . . . "Thermodynamic aspects of GaN:Cr epitaxial layers grown by MOVPE"@en . "RIV/60461373:22310/07:00018272!RIV08-MSM-22310___" . "Termodynamick\u00E9 aspekty p\u0159\u00EDpravy epitaxn\u00EDch vrstev GaN:Cr metodou MOVPE" . "RIV/60461373:22310/07:00018272" . . . "978-80-969310-4-0" . . "Sedmidubsk\u00FD, David" . . "454728" . . . "4"^^ . . "5"^^ . "Leitner, Jind\u0159ich" . .