"22310" . "Gd and Dy Implanted GaN for Spintronics" . . "Stejskal, Josef" . "Sedmidubsk\u00FD, David" . "978-80-969310-4-0" . . "Gd and Dy Implanted GaN for Spintronics"@en . . "[DC53AED0C449]" . . "Gd and Dy Implanted GaN for Spintronics" . . . "Hardtdegen, H." . . . "5"^^ . . . "GaN; ion implantation; dilute magnetic semiconductors; spintronics; magnetism"@en . "Sofer, Zden\u011Bk" . . . . "121-125" . "The MOVPE GaN thin films deposited on sapphire substrates were implanted by different doses of Gd and Dy, analyzed by RBS, XRD and the magnetic properties of the resulting layers were examined. The coexistence of paramagnetism and ferromagnetism was identified in the studied concentration range 0.1-1 at.% of rare earth in." . "4"^^ . "GaN implantovan\u00FD galliem a dysprosiem pro spintroniku"@cs . . "Mikulics, M." . . "Plze\u0148" . . . "Mary\u0161ko, Miroslav" . "Pe\u0159ina, V." . "Sajdl, Petr" . "Digital Graphic" . . . "The MOVPE GaN thin films deposited on sapphire substrates were implanted by different doses of Gd and Dy, analyzed by RBS, XRD and the magnetic properties of the resulting layers were examined. The coexistence of paramagnetism and ferromagnetism was identified in the studied concentration range 0.1-1 at.% of rare earth in."@en . "10"^^ . "GaN implantovan\u00FD galliem a dysprosiem pro spintroniku"@cs . . "Sborn\u00EDk p\u0159\u00EDsp\u011Bvk\u016F VI. ro\u010Dn\u00EDku konference Vrstvy a povlaky 2007" . "P(GA104/06/0642), Z(MSM6046137302)" . "Buchal, C." . . "Gd and Dy Implanted GaN for Spintronics"@en . "422987" . "RIV/60461373:22310/07:00018269" . "Hejtm\u00E1nek, Ji\u0159\u00ED" . "RIV/60461373:22310/07:00018269!RIV08-MSM-22310___" . . "GaN implantovan\u00FD galliem a dysprosiem pro spintroniku"@cs .