. "5"^^ . "476703" . "22310" . "Zborn\u00EDk predn\u00E1\u0161ok Vrstvy a povlaky 2006" . "The main focus of this work concerns the material, technological and some theoretical aspects of dilute magnetic semiconductors (DMS) based on the transition metal doped GaN thin film. The epitaxial thin layers of GaN with wurtzite structure was deposited by MOVPE technique on monocrystaline c-plane sappphire substrates at temperatures 1000 - 1100oC. The gaseous metalorganic precursors Ga(CH3)3 and amonia were used as sources of the components. Due to a relatively large lattice mismatch between Al2O3 and GaN a short accommodation period at 550oC characterized by a deposition of a polycrystalline buffer layers of GaN was included prior to the epitaxial growth. The prepared epitaxial layers were examined by means X-ray diffraction, scanning electron microscopy (SEM),atomic force microscopy (AFM),electron microprobe analysis (EMA). As a theoretical tool for the prediction of appropriate deposition conditions of GaN:Mn epitaxial layers in situ, calculations of equilibrium solubility limits o" . "Leitner, Jind\u0159ich" . "V t\u00E9to pr\u00E1ci se zab\u00FDv\u00E1me p\u0159\u00EDpravou epitaxn\u00EDch vrstev GaN a teoretick\u00FDmi v\u00FDpo\u010Dty p\u00E1sov\u00E9 struktury GaN:Mn. Rovnov\u00E1\u017En\u00E1 rozpustnost Mn v GaN bylo vypo\u010Dteno pomoc\u00ED ab-initio metod z elektronov\u00E9 struktury."@cs . . "GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS" . "Digital Graphic" . "The main focus of this work concerns the material, technological and some theoretical aspects of dilute magnetic semiconductors (DMS) based on the transition metal doped GaN thin film. The epitaxial thin layers of GaN with wurtzite structure was deposited by MOVPE technique on monocrystaline c-plane sappphire substrates at temperatures 1000 - 1100oC. The gaseous metalorganic precursors Ga(CH3)3 and amonia were used as sources of the components. Due to a relatively large lattice mismatch between Al2O3 and GaN a short accommodation period at 550oC characterized by a deposition of a polycrystalline buffer layers of GaN was included prior to the epitaxial growth. The prepared epitaxial layers were examined by means X-ray diffraction, scanning electron microscopy (SEM),atomic force microscopy (AFM),electron microprobe analysis (EMA). As a theoretical tool for the prediction of appropriate deposition conditions of GaN:Mn epitaxial layers in situ, calculations of equilibrium solubility limits o"@en . "GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS"@en . . . "Sedmidubsk\u00FD, David" . "5"^^ . "Sofer, Zden\u011Bk" . . . "GaN:Mn tenk\u00E9 epitaxn\u00ED vrstvy pro aplikace ve spintronice"@cs . "RIV/60461373:22310/06:00017021!RIV07-GA0-22310___" . "128-131" . "4"^^ . "GaN; epitaxial layers; spintronic; electronic structure; ab-initio"@en . . . "Tren\u010D\u00EDn" . "80-969310-2-4" . . "Stejskal, Josef" . . . "GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS"@en . "[3EF13B165AE0]" . . "RIV/60461373:22310/06:00017021" . "Strejc, Ale\u0161" . "2006-10-10+02:00"^^ . "GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS" . "Ro\u017Ekov pod Radho\u0161t\u011Bm" . . . . . . "P(GA104/06/0642)" . . . . "GaN:Mn tenk\u00E9 epitaxn\u00ED vrstvy pro aplikace ve spintronice"@cs . . .