"P(GA104/03/0387), Z(MSM6046137302)" . "Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas" . "Steins, Roger" . "Optimalizace vysokoteplotn\u00EDho r\u016Fstu GaN u\u017Eit\u00EDm N2 jako nosn\u00E9ho plynu"@cs . . . "Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas" . "Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas"@en . . . . . "Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas"@en . . "6"^^ . "Cho, Yong Suk" . "[4A95F42B90C0]" . "22310" . "Usually, in the MOVPE of group III nitrides, the group III and ammonia are injected separately into the reactor in order to prevent pre-reactions. The group V is injected closer to the heated substrate to increase the group V concentration near the substrate surface. We however have inverted the source gas supply in order to reduce parasitic deposition and to increase reactor uptimes and process efficiency [1]. However it is quite clear, that growth optimization with respect to uniformity needs a different strategy if the inlet geometry is changed [2]. Basically the uniformity is determined by the convective flow of the growth determining species into the reactor and the diffusive flow towards the substrate. In a horizontal reactor forced convection takes place parallel to the substrate surface and diffusion perpendicular to it. Using this knowledge, the optimization of the conventional process with respect to uniformity was already carried out [3]. In this paper we will present the optimization for t" . "RIV/60461373:22310/05:00014149" . "537093" . . . "Ahe, Martina von der" . . . . . "Usually, in the MOVPE of group III nitrides, the group III and ammonia are injected separately into the reactor in order to prevent pre-reactions. The group V is injected closer to the heated substrate to increase the group V concentration near the substrate surface. We however have inverted the source gas supply in order to reduce parasitic deposition and to increase reactor uptimes and process efficiency [1]. However it is quite clear, that growth optimization with respect to uniformity needs a different strategy if the inlet geometry is changed [2]. Basically the uniformity is determined by the convective flow of the growth determining species into the reactor and the diffusive flow towards the substrate. In a horizontal reactor forced convection takes place parallel to the substrate surface and diffusion perpendicular to it. Using this knowledge, the optimization of the conventional process with respect to uniformity was already carried out [3]. In this paper we will present the optimization for t"@en . . "Kaluza, Nicoleta" . "GaN; MOVPE; R\u016Fst; Dus\u00EDk; Nosn\u00FD plyn"@en . . . "Optimalizace vysokoteplotn\u00EDho r\u016Fstu GaN u\u017Eit\u00EDm N2 jako nosn\u00E9ho plynu"@cs . "Hardtdegen, Hilde" . "Optimalizace vysokoteplotn\u00EDho r\u016Fstu GaN u\u017Eit\u00EDm N2 jako nosn\u00E9ho plynu"@cs . "Sofer, Zden\u011Bk" . . . "RIV/60461373:22310/05:00014149!RIV06-MSM-22310___" . . "1"^^ .