"Growth and properties of GaN and AlN layers on silver substrates"@en . . . . "3"^^ . "R\u016Fst a vlastnosti GaN a AlN vrstev na st\u0159\u00EDbrn\u00FDch substr\u00E1tech"@cs . . "Growth and properties of GaN and AlN layers on silver substrates" . "2"^^ . "Growth and properties of GaN and AlN layers on silver substrates" . "Marso, Michel" . . . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "GaN; AlN; Metal Substrate; Silver Substrate; MBE; Grown; Device; Schottky Diod"@en . . "9"^^ . "We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN (11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (~10-3 A/cm2). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices." . "522954" . "0003-6951" . "We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN (11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (~10-3 A/cm2). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices."@en . "22310" . "Stejskal, Josef" . "Growth and properties of GaN and AlN layers on silver substrates"@en . . "Ko\u010Dan, Martin" . "Javorka, Petr" . "87" . "[6CAEB77FB7E5]" . "Kordo\u0161, Petr" . "RIV/60461373:22310/05:00013775!RIV06-MSM-22310___" . . "R\u016Fst a vlastnosti GaN a AlN vrstev na st\u0159\u00EDbrn\u00FDch substr\u00E1tech"@cs . "RIV/60461373:22310/05:00013775" . . . . "212109" . . "Mikulics, Martin" . . "L\u00FCth, Hans" . . "P(GA104/03/0387), Z(MSM6046137302)" . . . . . "R\u016Fst a vlastnosti GaN a AlN vrstev na st\u0159\u00EDbrn\u00FDch substr\u00E1tech"@cs . "Applied Physics Letters" . . "Rizzi, Angela" . . "Sofer, Zden\u011Bk" . .