"GaN epitaxial layers were grown by MOVPE technology on (0001) sapphire substrates. A horizontal type MOVPE reactor operated at lower pressure was used for the growth. Trimethylgallium (TMG) and ammonia (NH3) were used as source materials. The carrier gas was hydrogen. GaN layers of about 0,5 - 4 m thick was grown. Surface morfology, structural, electrical and optical parameters were measured and are discussed."@en . "Sofer, Zden\u011Bk" . . . . "Technologi\u00ED MOVPE byly p\u0159ipraveny vrstvy GaN na Saf\u00EDrov\u00FDch podlo\u017Ek\u00E1ch.. Byl u\u017Eit horizont\u00E1ln\u00ED reaktor pracuj\u00EDc\u00ED za sn\u00ED\u017Een\u00E9ho tlaku. Jako v\u00FDchoz\u00ED l\u00E1tky byly u\u017Eity trimethylgallium a amoniak. Byly p\u0159ipraveny vrstvy GaN tlust\u00E9 0,5 - 4 mikrometry, na kter\u00FDch byla sledov\u00E1na povrchov\u00E1 morfologie a m\u011B\u0159eny z\u00E1kladn\u00ED elektrick\u00E9 a optick\u00E9 parametry."@cs . "Digital Graphic" . . "Tren\u010D\u00EDn" . "2004-10-07+02:00"^^ . "80-968337-8-2" . . "RIV/60461373:22310/04:00012345!RIV/2005/GA0/223105/N" . . "Technologi\u00ED MOVPE byly p\u0159ipraveny vrstvy GaN na Saf\u00EDrov\u00FDch podlo\u017Ek\u00E1ch.. Byl u\u017Eit horizont\u00E1ln\u00ED reaktor pracuj\u00EDc\u00ED za sn\u00ED\u017Een\u00E9ho tlaku. Jako v\u00FDchoz\u00ED l\u00E1tky byly u\u017Eity trimethylgallium a amoniak. Byly p\u0159ipraveny vrstvy GaN tlust\u00E9 0,5 - 4 mikrometry, na kter\u00FDch byla sledov\u00E1na povrchov\u00E1 morfologie a m\u011B\u0159eny z\u00E1kladn\u00ED elektrick\u00E9 a optick\u00E9 parametry." . "3"^^ . "Stejskal, Josef" . . . "4"^^ . . "Strukturn\u00ED, elektrick\u00E9 a optick\u00E9 vlastnosti tenk\u00FDch vrstev GaN p\u0159ipraven\u00FDch technologi\u00ED MOVPE"@cs . "Structural, electrical and optical properties of GaN layers prepared by MOVPE technology"@en . "Structural, electrical and optical properties of GaN layers prepared by MOVPE technology"@en . . "Strukturn\u00ED, elektrick\u00E9 a optick\u00E9 vlastnosti tenk\u00FDch vrstev GaN p\u0159ipraven\u00FDch technologi\u00ED MOVPE" . . "[4A04435D9E97]" . "GaN;Low pressure MOVPE;Surface morphology;Electrical properties;Optical properties"@en . . "Ro\u017Enov pod Radho\u0161t\u011Bm" . . "Strukturn\u00ED, elektrick\u00E9 a optick\u00E9 vlastnosti tenk\u00FDch vrstev GaN p\u0159ipraven\u00FDch technologi\u00ED MOVPE" . . "Sborn\u00EDk Vrstvy a povlaky 2004" . . "173;178" . "22310" . . "P(GA104/03/0387), Z(MSM 223100002)" . "588592" . . . . "Leitner, Jind\u0159ich" . . "H\u00FCttel, Ivan" . . "RIV/60461373:22310/04:00012345" . "Strukturn\u00ED, elektrick\u00E9 a optick\u00E9 vlastnosti tenk\u00FDch vrstev GaN p\u0159ipraven\u00FDch technologi\u00ED MOVPE"@cs . "6"^^ . .