"22310" . . "2003-05-22+02:00"^^ . "Stejskal, Josef" . . "Tren\u010D\u00EDn" . "Tren\u010D\u00EDn" . "0"^^ . "Sborn\u00EDk Vrstvy a povlaky 2003" . "1"^^ . "0"^^ . . "Vrstvy a povlaky 2003" . . . "P(GA104/03/0387)" . "RIV/60461373:22310/03:00008281" . "P\u0159\u00EDprava a vlastnosti tenk\u00FDch vrstev nitridu gallit\u00E9ho pro aplikace v elektronice" . . "Preparation and property of GaN thin layers as materials for electronics"@en . "RIV/60461373:22310/03:00008281!RIV/2004/GA0/223104/N" . "623047" . "Preparation and property of GaN thin layers as materials for electronics"@en . "P\u0159\u00EDprava a vlastnosti tenk\u00FDch vrstev nitridu gallit\u00E9ho pro aplikace v elektronice" . . "P\u0159\u00EDprava a vlastnosti tenk\u00FDch vrstev nitridu gallit\u00E9ho pro aplikace v elektronice"@cs . . "AIIIN nitrides and their solid solution are promising materials for advanced optoelectronic and microelectronic devices such as light emitting diodes, lasers, detectors and high-temperature and high-power microwave devices. A conventional horizontal type MOVPE reactor was constructed and is described. Some structural and optical properties of GaN thin layers are presented."@en . "Na pracovi\u0161ti V\u0160CHT Praha bylo vybudov\u00E1no pracovi\u0161t\u011B pro p\u0159\u00EDpravu epitaxn\u00EDch vrstev nitrid\u016F 13. skupiny technologi\u00ED MOVPE. Za\u0159\u00EDzen\u00ED umo\u017E\u0148uje p\u0159\u00EDpravu bin\u00E1rn\u00EDch nitrid\u016F a jejich tern\u00E1rn\u00EDch a kvatern\u00E1rn\u00EDch substitu\u010Dn\u00EDch roztok\u016F. Zdrojem prvk\u016F 13. skupiny jsou organokovov\u00E9 slou\u010Deniny (trimethylgallium, trimethylaluminium), zdrojem dus\u00EDku je vysoce \u010Dist\u00FD amoniak. Saf\u00EDrov\u00E9 podlo\u017Eky jsou uist\u011Bny na molybdenov\u00E9m substr\u00E1t\u011B, kter\u00FD je vyh\u0159\u00EDv\u00E1n induk\u010Dn\u00EDm oh\u0159evem. Pr\u00E1ce jsou sm\u011Brov\u00E1ny p\u0159edev\u0161\u00EDm na p\u0159\u00EDpavu epitaxn\u00EDch vrstev GaN a jejich charakterizaci." . "155" . "P\u0159\u00EDprava a vlastnosti tenk\u00FDch vrstev nitridu gallit\u00E9ho pro aplikace v elektronice"@cs . "GaN; MOVPE; X-ray diffraction; absorbance"@en . . "80-968337-1-5" . . . . "[653FC52E2876]" . . "1"^^ . . . . . "1"^^ .